[18p-P10-1~13] 13.6 Silicon devices / Integration technology

△ [18p-P10-2] Ultra-thin body Ge-on insulator nMOSFETs fabricated by Ge condensation and Sb diffusion

^○(M2)WuKang Kim¹, Yufei Kin¹, Younghyun Kim¹, SangHyeon Kim¹, Takenori Osada², Masahiko Hata², Mitsuru Takenka¹, Shinichi Takagi¹ (The University of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

Keywords:Ge-on-insulator nMOSFET,アンチモンの固層拡散