[18p-P10-1~13] 13.6 Silicon devices / Integration technology

[18p-P10-3] GeSn pMOSFETs on Si (111) by solid phase epitaxy

^○Tatsuro maeda¹, Jevasuwan Wipakorn¹, Hiroyuki Hattori¹, Noriyuki Uchida¹, J. -P. Locquet², R. R. Lieten^{2, 3} (AIST¹, KU Leuven², IMEC³)

Keywords:GeSn