[18p-P10-1~13] 13.6 Silicon devices / Integration technology

[18p-P10-4] Poly Germanium Junctionless Tri-gate FET for 3-D Stacked IC

Yoshiki Kamata¹, ^○Yuuichi Kamimuta¹, Keiji Ikeda¹, Kiyoe Furuse¹, Mizuki Ono¹, Minoru Oda¹, Yoshihiko Moriyama¹, Kouji Usuda¹, Masahiro Koike¹, Toshifumi Irisawa¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (AIST GNC¹)

Keywords:ゲルマニウム,ジャンクションレス,トランジスタ