[18p-P10-1~13] 13.6 Silicon devices / Integration technology

[18p-P10-5] Enhancement of Hole Mobility and Cut-off Characteristics of Strained Ge Nanowire pMOSFETs by using Plasma Oxidized GeOx Inter-layer for Gate Stack

^○Keiji Ikeda¹, Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Mizuki Ono¹, Koji Usuda¹, Minoru Oda¹, Toshifumi Irisawa¹, Kiyoe Furuse¹, Tsutomu Tezuka¹ (AIST-GNC¹)

Keywords:Ge,MOSFET,Nanowire