Performance Prediction on n-MOSFET using Single-Layer MoS<sub>2</sub> Channel

Takumi Ohashi

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[19p-C8-1~18] 13.6 Silicon devices / Integration technology

Thu. Sep 19, 2013 1:15 PM - 6:30 PM C8 (TC3 2F-201)

5:15 PM - 5:30 PM

[19p-C8-14] Performance Prediction on n-MOSFET using Single-Layer MoS₂ Channel

^○Takumi Ohashi¹, Hitoshi Wakabayashi², Kuniyuki Kakushima², Nobuyuki Sugii², Akira Nishiyama², Yoshinori Kataoka², Kenji Natori³, Kazuo Tsutsui², Hiroshi Iwai³ (Tokyo Tech. ENG¹, Tokyo Tech. IGSSE², Tokyo Tech. FRC³)

Keywords:MoS2,単層,MOSFET

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Presentation information

[19p-C8-1~18] 13.6 Silicon devices / Integration technology

[19p-C8-14] Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel

[19p-C8-14] Performance Prediction on n-MOSFET using Single-Layer MoS₂ Channel