[19p-C8-1~18] 13.6 Silicon devices / Integration technology

[19p-C8-15] Effect of Ionization Energy Increase of Phosphorus Dopants in Nanwire Transistors’s Electrical characterizations

^○Yuya Kurosawa^1,2, Naoya Kadotani¹, Tunaki Takahashi², Teruyuki Ohashi¹, Shunri Oda³, Ken Uchida^1,2 (Dept. Phys. Elec Tokyo Institute of Technology.¹, Keio Univ.², QNERC Tokyo Institute of Technology³)

Keywords:イオン化エネルギー,ナノワイヤトランジスタ