[19p-C8-1~18] 13.6 Silicon devices / Integration technology

[19p-C8-16] Effect of Deformation Potential Increase at MOS Interfaces on Drain Current of Ultrathin Channel MOSFETs

^○Shunsuke Koba¹, Ryoma Ishida¹, Yuko Kubota¹, Hideaki Tsuchiya^1,3, Yoshinari Kamakura^2,3, Nobuya Mori^2,3, Matsuto Ogawa¹ (Kobe Univ.¹, Osaka Univ.², JST CREST³)

Keywords:モンテカルロ法,音響フォノン,変形ポテンシャル