Session information

Oral presentation

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[19p-C8-1~18] 13.6 Silicon devices / Integration technology

Thu. Sep 19, 2013 1:15 PM - 6:30 PM C8 (TC3 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:15 PM - 1:15 PM)

1:15 PM - 1:45 PM

[19p-C8-1] [JSAP Paper Award Speech](30 min.) Single-Electron Stochastic Resonance Using Si Nanowire Transistors

^○Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (NTT BRL¹)

1:45 PM - 2:00 PM

△ [19p-C8-2] Characterization of MOS Si/SiGe quantum point contact

^○Jun Kamioka¹, Tetsuo Kodera^1,2,3, Kenta Takeda⁴, Toshiaki Obata⁴, Waseem. M. Akhtar⁴, Seigo Tarucha^2,4,5, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³, The Univ. of Tokyo⁴, RIKEN⁵)

2:00 PM - 2:15 PM

△ [19p-C8-3] Characterization of p-Channel Si Double Quantum Dot by Hole Transport

^○Ko Yamada¹, Tetsuo Kodera^1,2,3, Tomohiro Kambara¹, Yukio Kawano¹, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, Univ. of Tokyo², JST-PRESTO³)

2:15 PM - 2:30 PM

△ [19p-C8-4] Observation of the excitation of electrons in silicon quantum dots generated from the back-action of a charge sensor

^○Kosuke Horibe¹, Tetsuo Kodera^1,2,3, Yukio Kawano¹, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³)

2:30 PM - 2:45 PM

△ [19p-C8-5] Charge sensing of a silicon triangular triple quantum dot system

^○(M2)Raisei Mizokuchi¹, Tetsuo Kodera^1,2,3, Kosuke Horibe¹, Yukio Kawano¹, Yasuhiko Arakawa^2,4, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³, IIS, the Univ. of Tokyo⁴)

2:45 PM - 3:00 PM

[19p-C8-6] The characteristics of Excited states of double-gate Si single-electron transistor

^○Isamu Yoshioka¹, Takafumi Uchida¹, Hikaru Satou¹, Masashi Arita¹, Satoshi Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ.¹, NTT Basic Research Labs.²)

3:00 PM - 3:15 PM

[19p-C8-7] The change of the capacitive coupling of double quantum dot Si single-electron transistor in few electron regime

^○(M2)Takafumi Uchida¹, Isamu Yoshioka¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ¹, NTT Basic Research Labs²)

Break (3:15 PM - 3:30 PM)

3:30 PM - 4:00 PM

[19p-C8-8] [Award for Best Review Paper Speech](30 min.)Current Status and Future Perspective in Post-Scaling Technology

^○Shigeaki Zaima¹ (Nagoya Univ.¹)

4:00 PM - 4:15 PM

[19p-C8-9] Experimental Study on 2D-Si Layers for Future Several-nm CMOS (III)

^○Yuusuke Nagata¹, Yuuta Makahara¹, Yuuya Suzuki¹, Takashi Aoki¹, Toshiyuki Samejima², Tomohirsa Mizuno¹ (Kanagawa Univ.¹, Tokyo Univ. Agri. Tech.²)

4:15 PM - 4:30 PM

[19p-C8-10] Experimental Study on 2D-Si Layers for Future Several-nm CMOS (IV)

^○Yuya Suzuki¹, Yuta Nakahara¹, Yusuke Nagata¹, Takashi Aoki¹, Tomohisa Mizuno¹, Toshiyuki Samezima² (Kanagawa Univ.¹, Tokyo Univ. Agri. Tech.²)

4:30 PM - 4:45 PM

[19p-C8-11] Experimental Study on 2D-Si layers for Future Several-nm CMOS (V)

^○Yuta Nakahara¹, Yusuke Nagata¹, Yuya Suzuki¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (Kanagawa Univ.¹, Tokyo Univ. Agri. Tech.²)

4:45 PM - 5:00 PM

△ [19p-C8-12] Low temperature formation of Ni-GaSb alloy Schottky junction for Metal Source/Drain of GaSb pMOSFET

^○Koichi Nishi¹, SangHyoen Kim¹, Masahumi Yokoyama¹, Haruki Yokoyama², Mituru Takenaka¹, Shinichi Takagi¹ (University of Tokyo¹, NTT Photonics Laboratories, NTT Corporation²)

5:00 PM - 5:15 PM

△ [19p-C8-13] Channel Length Scaling Limits of III-V Channel MOSFETs Governed By Source-Drain Direct Tunneling

^○(M1)Masaki Ohmori¹, Shunsuke Koba¹, Yōsuke Maegawa¹, Hideaki Tsuchiya^1,3, Yoshinari Kamakura^2,3, Nobuya Mori^2,3, Matsuto Ogawa¹ (Kobe Univ.¹, Osaka Univ.², JST CREST³)

5:15 PM - 5:30 PM

[19p-C8-14] Performance Prediction on n-MOSFET using Single-Layer MoS₂ Channel

^○Takumi Ohashi¹, Hitoshi Wakabayashi², Kuniyuki Kakushima², Nobuyuki Sugii², Akira Nishiyama², Yoshinori Kataoka², Kenji Natori³, Kazuo Tsutsui², Hiroshi Iwai³ (Tokyo Tech. ENG¹, Tokyo Tech. IGSSE², Tokyo Tech. FRC³)

5:30 PM - 5:45 PM

[19p-C8-15] Effect of Ionization Energy Increase of Phosphorus Dopants in Nanwire Transistors’s Electrical characterizations

^○Yuya Kurosawa^1,2, Naoya Kadotani¹, Tunaki Takahashi², Teruyuki Ohashi¹, Shunri Oda³, Ken Uchida^1,2 (Dept. Phys. Elec Tokyo Institute of Technology.¹, Keio Univ.², QNERC Tokyo Institute of Technology³)

5:45 PM - 6:00 PM

[19p-C8-16] Effect of Deformation Potential Increase at MOS Interfaces on Drain Current of Ultrathin Channel MOSFETs

^○Shunsuke Koba¹, Ryoma Ishida¹, Yuko Kubota¹, Hideaki Tsuchiya^1,3, Yoshinari Kamakura^2,3, Nobuya Mori^2,3, Matsuto Ogawa¹ (Kobe Univ.¹, Osaka Univ.², JST CREST³)

6:00 PM - 6:15 PM

[19p-C8-17] Extraction of Quasi-Ballistic Transport Parameters in Ultrashort Channel Si MOSFETs

^○Ryoma Ishida¹, Shunsuke Koba¹, Hideaki Tsuchiya^1,3, Yoshinari Kamakura^2,3, Nobuya Mori^2,3, Matsuto Ogawa¹ (Kobe Univ.¹, Osaka Univ.², JST CREST³)

6:15 PM - 6:30 PM

[19p-C8-18] Performance Enhancement of Schottky Barrier Tunnel FET with Core-Shell Gate Structure

^○Shuichiro Hashimoto¹, Yasuhiro Shikahama¹, Takanobu Watanabe^1,2 (Waseda Univ.¹, Waseda INN.²)

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