[19p-C8-1~18] 13.6 Silicon devices / Integration technology

[19p-C8-7] The change of the capacitive coupling of double quantum dot Si single-electron transistor in few electron regime

^○(M2)Takafumi Uchida¹, Isamu Yoshioka¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ¹, NTT Basic Research Labs²)

Keywords:二重量子ドット,単電子トランジスタ,シリコン