[20p-B4-1~8] 13.5 Si process technology

[20p-B4-3] Ni silicidation rate in Si nanowires (2) Ion dose dependency

^○Hiroki Kosugiyama¹, Yasuhiro Shikahama¹, Hiroki Yamashita¹, Shuichiro Hashimoto¹, Kouhei Takei¹, Jing Sun¹, Takashi Matsukawa², Meishoku Masahara², Takanobu Watanabe¹ (Waseda Univ.¹, AIST²)

Keywords:ニッケルシリサイド,ナノワイヤ,不純物濃度