Regular sessions(Oral presentation)

[29a-G6-1~12] 13.1 Basic properties and their evaluation

Fri. Mar 29, 2013 9:00 AM - 12:15 PM G6 (B5 1F-2106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

[29a-G6-1] Laser-Assisted Atom Probe Analysis of SiN Thin Film with 15N Isotope

^○Teruyuki Kinno¹, Mitsuhiro Tomita¹, Katsuyuki Kitamoto², Shiro Takeno² (Toshiba R&D Center¹, Toshiba S&S Company²)

[29a-G6-2] Crystal / amorphous structure analysis of Si nanoparticle using Raman spectroscopy

^○Miho Momose^1,2, Masao Hirasaka², Yukio Furukawa¹ (Teijin Ltd.¹, Waseda Univ.²)

[29a-G6-3] Effect of lattice constant on permittivity of semi-conductors

^○（B）Sayaka Morimoto¹, Tomoyuki Hamada², Hideo Sekino¹ (Toyohashi Tech.¹, Hitachi Inst.²)

[29a-G6-4] Electron Emission Mechanism of Si-Nanocrystals/Si-Nanocolumnar Structures as Evaluated by Non-contact Conductive Atomic Force Microscopy

^○（M1）Daichi Takeuchi¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹, Hirokazu Kaki³, Tsukasa Hayashi³ (Nagoya Univ.¹, Hiroshima Univ.², NISSIN ELECTRIC Co. Ltd.³)

[29a-G6-5] Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots

^○Yoshihisa Suzuki¹, Katsunori Makihara¹, Hiroki Takami¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

[29a-G6-6] Selective Growth of Self-Assembling Si-based Quantum Dots

^○Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

[29a-G6-6.1] Break(15min)

[29a-G6-7] Temperature Dependence of Electrical Conductivity of Phosphorus-Doped Si Films after Blue-Multi-Laser-Diode Annealing

^○Takuma Nishinohara¹, Satoshi Chinen¹, Tatsuya Okada¹, Takashi Noguchi¹ (Univ. of the Ryukyus¹)

[29a-G6-8] Observation of Deuterium Distribution in Silicon by Atom Probe Tomography

^○（P）Hisashi Takamizawa¹, Katsuya Hoshi¹, Yasuo Shimizu¹, Koji Inoue¹, Fumiko Yano^1,2, Shinji Nagata¹, Tatsuo Shikama¹, Yasuyoshi Nagai¹ (IMR Tohoku Univ.¹, Tokyo City Univ.²)

[29a-G6-9] Characterization of Electron Transport Through Ultra-High-Density Array of One-dimensionally Self-Aligned Si-based Quantum Dots

^○（B）Hirohisa Niimi¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

[29a-G6-10] Characterization of Electroluminescence from Multiply-stacking B-doped Si Quantum Dots

^○（B）Takahisa Yamada¹, Katsunori Makihara¹, Hiroki Takami¹, Yoshihisa Suzuki¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

[29a-G6-11] ▲Edge Enhancement of Photo-Current in Si Stripes Measured by Multimode SPM

^○Leonid Bolotov^1,2, Vladimir Poborchii², Tetsuya Tada², Toshihiko Kanayama² (Univ. of Tsukuba¹, AIST²)

[29a-G6-12] △Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate

^○（D）Motohiro Tomita^1,2, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC², AIST GNC³)

Sessions

13. Semiconductors A (Silicon) » 13.1 Basic properties and their evaluation