[28a-G22-1~13] 15.6 IV-group-based compounds

[28a-G22-9] △In-situ etching conditions of 4H-SiC Si-face substrates with vicinal off-angle

^○Keiko Masumoto^1,2, Kazutoshi Kojima^1,2, Sachiko Ito^1,2, Kentaro Tamura^1,3, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³)

Keywords:SiC、エピタキシャル、微傾斜