The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[28p-G2-1~16] 13.3 Insulator technology

Thu. Mar 28, 2013 2:30 PM - 6:45 PM G2 (B5 1F-2102)

[28p-G2-12] △Formation of Al2O3/GeOx/Ge structure Using Low-Temperature and Damage-Free Neutral-Beam Oxidation Process

Akira Wada1,2, Daiki Nakayama1, Rui Zhang3, Shinichi Takagi3, Seiji Samukawa1,4 (IFS, Tohoku Univ.1, μSIC, Tohoku Univ.2, Dept. Eng., Univ. of Tokyo3, WPI-AIMR, Tohoku Univ.4)

Keywords:中性粒子ビーム、酸化技術、Geプロセス技術