[28p-G2-1~16] 13.3 Insulator technology

[28p-G2-14] ▲Improvement of High Ns Mobility of Ge MOSFETs by Reducing GeO_x/Ge Interface Roughness

^○（P）Rui Zhang¹, Po-Chin Huang¹, Ju-Chin Lin¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. Tokyo¹)

Keywords:germanium、mobility、interface roughness