[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[29p-G16-13] △Dislocation behavior in device active area of surface-oxygen-concentration controlled Si wafers

^○（B）Hirotada Asazu¹, Shotaro Takeuchi¹, Hiroya Sannai¹, Haruo Sudo², Koji Araki², Yoshiaki Nakamura^1,3, Koji Izunome², Akira Sakai¹ (Osaka Univ.¹, GlobalWafers Japan Co.,Ltd.², PRESTO-JST³)

Keywords:Si wafer、格子欠陥、転位