[29p-PB1-1~20] 13.3 Insulator technology

[29p-PB1-11] Improvement of La₂O₃/In_0.53Ga_0.47As interface property using atomic-layer-deposition

^○Hiroshi Oomine¹, Zade Darius¹, Yuya Suzuki¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Takeo Hattori¹, Kenji Natori¹, Hiroshi Iwai¹ (FRC, Tokyo Tech.¹, IGSSE, Tokyo Tech.²)

Keywords:La2O3、InGaAs、ALD