Oral presentation

[19a-B3-1~9] 17.1 Growth technology

Fri. Sep 19, 2014 9:00 AM - 11:45 AM B3 (Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:30 AM

[19a-B3-1] [JSAP Paper Award Speech]（30min.）
Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film

^○Hiroki Ago¹, Kenji Kawahara¹, Yui Ogawa¹, Shota Tanoue¹, Mark A. Bissett¹, Masaharu Tsuji¹, Hidetsugu Sakaguchi¹, Roland J. Koch², Felix Fromm², Thomas Seyller², Katsuyoshi Komatsu³, Kazuhito Tsukagoshi³ (Kyushu University¹, Technische Universita¨ t Chemnitz², NIMS³)

9:30 AM - 9:45 AM

[19a-B3-2] Direct growth graphite thin films on insulating substrate using an organic coating

^○Mikihiro Kato¹, Miku Nishimura¹, Kenichi Uki¹, Xinwei Zhao¹ (Tokyo Univ. of Science¹)

9:45 AM - 10:00 AM

[19a-B3-3] Structural stability and electronic structures of impurities near the edge of graphene

^○Yuuki Uchida^1,2, Akira Akaishi^1,2, Jun Nakamura^1,2 (Dep. of Engineering Science, The Univ. of Electro-Communication (UEC-Tokyo)¹, JST-CREST²)

10:00 AM - 10:15 AM

[19a-B3-4] Graphene-metal Interaction Investigated by Raman Spectroscopy

^○Junro Takahashi¹, Hiroki Kato¹, Yoshikazu Homma¹ (Tokyo Univ. of Science¹)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [19a-B3-5] Selective growth and mechanism of bilayer graphene on Cu-Ni binary catalysts

^○Yuichiro Takesaki¹, Masaharu Tsuji^1,2, Hiroki Ago^1,2,3 (Grad. Schl. Eng. Sci., Kyushu Univ.¹, Inst. Mater. Chem. Eng., Kyushu Univ.², PRESTO-JST³)

10:45 AM - 11:00 AM

△ [19a-B3-6] Dynamics of graphene growth on Cu surface

^○Yujiro Ota¹, Seigi Mizuno¹, Hiroki Hibino², Masaharu Tsuji^1,3, Hiroki Ago^1,3,4 (Grad. Schl. Eng. Sci., Kyushu Univ.¹, NTT Basic Res. Lab.², Inst. Mater. Chem. Eng., Kyushu Univ.³, PRESTO-JST⁴)

11:00 AM - 11:15 AM

△ [19a-B3-7] High Efficiency Synthesis of Suspended Graphene Nanoribbon Array

^○Hiroo Suzuki¹, Toshiaki Kato¹, Toshiro Kaneko¹ (Dept. of Electronic Eng., Tohoku Univ.¹)

11:15 AM - 11:30 AM

△ [19a-B3-8] Graphene growth on copper substrates by controlling water content

^○Masafumi Inoue¹, Yuki Anno¹, Kuniharu Takei¹, Seiji Akita¹, Takayuki Arie¹ (Osaka Pref. Univ.¹)

11:30 AM - 11:45 AM

▼ [19a-B3-9] Controlling shape and number of layers of graphene crystals in CVD process using waste plastic as carbon source

^〇Subash Sharma, Golap Kalita, Remi Papon, Masaki Tanemura (Nagoya Institute of technology)

Oral presentation

[19p-B3-1~16] 17.1 Growth technology

Fri. Sep 19, 2014 1:15 PM - 5:30 PM B3 (Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[19p-B3-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Electrical and thermal properties of isotopically modified graphene heterojunction

^○Yuki Anno¹, Kuniharu Takei¹, Seiji Akita¹, Takayuki Arie¹ (Osaka Pref. Univ.¹)

1:30 PM - 1:45 PM

[19p-B3-2] [Young Scientist Oral Presentation Award Speech]（15min.）
In-situ blackbody radiation microscopy of CVD growth of graphene

^○Tomoo Terasawa¹, Koichiro Saiki^1,2 (Univ. of Tokyo¹, Univ. of Tokyo²)

1:45 PM - 2:00 PM

[19p-B3-3] Role of [1-100] steps in the first-graphene-layer growth on SiC(0001) Si face

^○Hiroyuki Kageshima^1,2, Hiroki Hibino², Hiroshi Yamaguchi², Masao Nagase³ (Shimane Univ.¹, NTT Basic Research Labs.², Univ. Tokushima³)

2:00 PM - 2:15 PM

[19p-B3-4] First-Principles Simulations for Graphene Growth Induced by Si sublimation from Stepped SiC Surface

^○Yuki Ono^1,4, Takahiro Yamasaki^2,4, Takahisa Ohno^2,3,4 (1¹, 2², 3³, 4⁴)

2:15 PM - 2:30 PM

[19p-B3-5] Epitaxial Growth of Graphene on SiC by Chemical Vapor Deposition

^○Takashi Kajiwara¹, Tomoya Takasaki¹, Shinichi Kimoto¹, Anton Visikovskiy¹, Fumio Komori², Satoru Tanaka¹ (Kyushu Univ.¹, Univ. of Tokyo²)

2:30 PM - 2:45 PM

[19p-B3-6] Study of Surface Dynamics of Graphene Segregated Nickel using Silver Particles

^○Hiroki Kato¹, Yuta Momiuchi¹, Junro Takahashi¹, Yoshikazu Homma¹ (Tokyo Univ. of Science¹)

2:45 PM - 3:00 PM

[19p-B3-7] Growth of Large Single-Crystal Graphene Domains by Alcohol CVD Method

^○Kohei Tsushima¹, Masaki Sota¹, Xiao Chen¹, Shohei Chiashi¹, Shigeo Maruyama¹ (Univ. of Tokyo¹)

3:00 PM - 3:15 PM

[19p-B3-8] The effect of reduction methods on quality of graphene synthesized from graphene oxide on metal

^○Seiji Obata¹, Hiroshige Tanaka², Koichiro Saiki^1,2 (Univ. of Tokyo¹, Univ. of Tokyo²)

Break 15:15～15:30 （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[19p-B3-9] Thickness dependence of multi-layer graphene synthesis with epitaxial catalysts and its electrical properties

^○Daiyu Kondo^1,2, Haruhisa Nakano¹, Bo Zhou¹, Akiko I¹, Kenjiro Hayashi^1,2, Shintaro Sato^1,2, Naoki Yokoyama^1,2 (AIST¹, Fujitsu Labs²)

3:45 PM - 4:00 PM

[19p-B3-10] Fabrication of multilayer graphene by precipitation method using Al2O3 barrier layer

^○Manabu Suzuki¹, Jumpei Yamada¹, Yuki Ueda¹, sigeya Naritsuka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

4:00 PM - 4:15 PM

▲ [19p-B3-11] Bottom-Up Graphene-Nanoribbon Fabrication Reveals Chiral Edges and Enantioselectivity

^〇Patrick Han¹, Kazuto Akagi¹, Filippo Federici Canova¹, Hirotaka Mutoh¹, Susumu Shiraki¹, Katsuya Iwaya², Paul Weiss³, Naoki Asao¹, Taro Hitosugi¹ (WPI-AIMR, Tohoku Univ.¹, RIKEN CEMS², UCLA³)

4:15 PM - 4:30 PM

[19p-B3-12] Selective bilayer graphene synthesis by plasma CVD

^○Ryuichi Kato¹, Yuki Okigawa^1,2, Masatou Ishihara^1,2, Takatoshi Yamada^1,2, Masataka Hasegawa^1,2 (TASC¹, AIST NTRC²)

4:30 PM - 4:45 PM

[19p-B3-13] The preparation of high thermal conductive multilayer graphene films from ultra-thin polymer films

^○Atsushi Tatami^1,2, Masamitsu Tachibana^1,2, Takashi Yagi^2,3, Megumi Akoshima^2,3, Mutsuaki Murakami^1,2 (Kaneka Corporation¹, TASC Graphene Division², National Institute of Advanced Industrial Science and Technology³)

4:45 PM - 5:00 PM

[19p-B3-14] Growth of Graphene and Nitrogen-Doped Graphene Using Novel Molecules

^○Tokio Katoh¹, Gaku Imamura¹, Seiji Obata¹, Malli Bhanuchandra², Hideki Yorimitsu², Koichiro Saiki¹ (Univ. of Tokyo¹, Kyoto Univ.²)

5:00 PM - 5:15 PM

[19p-B3-15] Relationship between Conductivity and Domain Size for Graphene Synthesized by Plasma Treatment

^○Yuki Okigawa^1,2, Ryuichi Kato², Masatou Ishihara^1,2, Takatoshi Yamada^1,2, Masataka Hasegawa^1,2 (AIST¹, TASC²)

5:15 PM - 5:30 PM

[19p-B3-16] Roll-to-Roll deposition of graphene on flexible web by low-temperature plasma CVD

^○Takatoshi Yamada^1,2, Nayuta Shimada², Kazuki Uekusa², Masataka Hasegawa^1,2 (AIST¹, TASC²)

Oral presentation

[20a-B1-1~8] 17.1 Growth technology

Sat. Sep 20, 2014 9:00 AM - 11:00 AM B1 (Seminar1)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-B1-1] Multiple-Cycle Growth of Single-Walled Carbon Nanotubes Using Opened Nanotubes as the Template

^○(M1)Hiroki Takezaki¹, Takanori Umino¹, Taiki Inoue¹, Shohei Chiashi¹, Shigeo Maruyama¹ (Univ. of Tokyo¹)

9:15 AM - 9:30 AM

[20a-B1-2] Re-growth of carbon nanotubes by chemical vapor deposition and optical characterization

^○Chisato Yamada¹, Huafeng Wang¹, Masahiro Ito¹, Hiroki Kato¹, Yoshikazu homma¹ (Tokyo Univ. of Science¹)

9:30 AM - 9:45 AM

△ [20a-B1-3] Carbon nanotube cloning growth from carbon nanotube on SiC

^○Yu Hirano¹, Masafumi Inaba¹, Megumi Shibuya¹, Kazuma Suzuki¹, Chih-Yu Lee¹, Miho Myodo¹, Atsushi Hiraiwa¹, Wataru Norimatsu², Michiko Kusunoki², Hiroshi Kawarada¹ (Waseda Univ.¹, Nagoya Univ.²)

9:45 AM - 10:00 AM

△ [20a-B1-4] High Purity Growth of (6,4) Single-Walled Carbon Nanotubes by Pulse Plasma CVD

^○Bin Xu¹, Toshiaki Kato¹, Toshiro Kaneko¹ (Dept. of Electronic Eng., Tohoku Univ.¹)

10:00 AM - 10:15 AM

△ [20a-B1-5] Low-pressure chemical vapor deposition for reducing the fiber diameter of multi-walled carbon nanocoils

^○Yoshiaki Shimizu¹, Yoshiyuki Suda¹, HItofumi Takikawa¹, Hitoshi Ue², Kazuki Shimizu³, Yoshito Umeda⁴ (Toyohashi Univ. of Technol.¹, Tokai Carbon², Shonan Plastic Mfg.³, Toho Gas⁴)

10:15 AM - 10:30 AM

[20a-B1-6] Synthesis of vertical aligned CNTs for polymer electrolyte fuel cell from Fe nanoparticles-LB films on SiO₂ substrate with Al₂O₃

^○Shota Takagiwa¹, Naoki Kuriyama¹, Masaaki Ohashi¹, Masahito Kushida¹ (Chiba univ.¹)

10:30 AM - 10:45 AM

[20a-B1-7] Electrical property and structural change of Si-included carbon nanofibers

^○Yu Kuwataka¹, Zamri Mohd¹, Yazid Yaakob¹, Golap Kalita¹, Masaki Tanemura¹ (Nagoya Inst, Technol.¹)

10:45 AM - 11:00 AM

[20a-B1-8] Synthesis and structure evaluation of carbon nanotubes grown from Fe3O4@SiO2 core-shell nanoparticles

^○Masaaki Ohashi¹, Naoki Kuriyama¹, Osamu Kanasugi¹, Shota Takagiwa¹, Masahito Kushida¹ (Chiba Univ.¹)

Oral presentation

[20a-B3-1~7] 17.1 Growth technology

Sat. Sep 20, 2014 9:00 AM - 10:45 AM B3 (Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-B3-1] LEEM/LEED analysis of exfoliated MoS₂ thin films

^○Hiroki Hibino¹, Katsuhiko Nishiguchi¹, Seigi Mizuno², Hiroyuki Kageshima³ (NTT Basic Research Labs.¹, Kyushu Univ.², Shimane Univ.³)

9:15 AM - 9:30 AM

[20a-B3-2] Direct CVD synthesis of atomically thin WS₂ on hBN

^○Mitsuhiro Okada¹, Takumi Sawazaki¹, Kenji Watanabe², Takashi Taniguchi², Hisanori Shinohara¹, Ryo Kitaura¹ (Nagoya Univ.¹, NIMS²)

9:30 AM - 9:45 AM

△ [20a-B3-3] Synthesis and characterization of MoxW1-xS2 atomic layers by using thin-film sulfurization

^○Yu Kobayashi¹, Shohei Mori¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (Tokyo Metropolitan Univ.¹, JST-PRESTO²)

9:45 AM - 10:00 AM

[20a-B3-4] Characterization of transport properties of transition metal dichalcogenides by using indium soldering

^○Ryosuke Inoue¹, Yu Kobayashi¹, Shohei Mori¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (Tokyo Metropolitan Univ¹, JST-PRESTO²)

10:00 AM - 10:15 AM

△ [20a-B3-5] Functionalization of Transition Metal Dichalcogenides by Mild Plasma Treatment

^○Tomoyuki Takahashi¹, Toshiaki Kato¹, Toshiro Kaneko¹ (Dept. of Electronic Eng., Tohoku Univ.¹)

10:15 AM - 10:30 AM

[20a-B3-6] Crystal growth of metallic transition metal dichalcogenides by using thin-film sulfurization

^○Shogo Sasaki¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (Tokyo Metropolitan Univ.¹, JST-PRESTO²)

10:30 AM - 10:45 AM

▲ [20a-B3-7] Vertically-Aligned Carbon Nanosheets on Grafoils for Lithium Ion Batteries

^○Zhipeng Wang¹, Hironori Ogata², Shingo Morimoto¹, Masatsugu Fujishige¹, Kenji Takeuchi¹, Yoshio Hashimoto¹, Morinobu Endo¹ (Shinshu Univ.¹, Hosei Univ.²)

Sessions

17. Nanocarbon Technology » 17.1 Growth technology

[19a-B3-1~9] 17.1 Growth technology

△ [19a-B3-5] Selective growth and mechanism of bilayer graphene on Cu-Ni binary catalysts

△ [19a-B3-6] Dynamics of graphene growth on Cu surface

△ [19a-B3-7] High Efficiency Synthesis of Suspended Graphene Nanoribbon Array

△ [19a-B3-8] Graphene growth on copper substrates by controlling water content

▼ [19a-B3-9] Controlling shape and number of layers of graphene crystals in CVD process using waste plastic as carbon source

[19p-B3-1~16] 17.1 Growth technology

▲ [19p-B3-11] Bottom-Up Graphene-Nanoribbon Fabrication Reveals Chiral Edges and Enantioselectivity

[20a-B1-1~8] 17.1 Growth technology

△ [20a-B1-3] Carbon nanotube cloning growth from carbon nanotube on SiC

△ [20a-B1-4] High Purity Growth of (6,4) Single-Walled Carbon Nanotubes by Pulse Plasma CVD

△ [20a-B1-5] Low-pressure chemical vapor deposition for reducing the fiber diameter of multi-walled carbon nanocoils

[20a-B3-1~7] 17.1 Growth technology

△ [20a-B3-3] Synthesis and characterization of MoxW1-xS2 atomic layers by using thin-film sulfurization

△ [20a-B3-5] Functionalization of Transition Metal Dichalcogenides by Mild Plasma Treatment

▲ [20a-B3-7] Vertically-Aligned Carbon Nanosheets on Grafoils for Lithium Ion Batteries