Symposium

[19p-E13-1~17] Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

Wed. Mar 19, 2014 1:00 PM - 7:00 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[19p-E13-1] Opening

^○Hideto Miyake¹, Sakai² (Mie Univ.¹, Tohoku Univ.², Tokyo Univ.³, Yamaguchi Univ.⁴)

1:15 PM - 1:45 PM

[19p-E13-2] Creation of nitride singular structures by active use of non-equilibrium conditions

^○Hiorshi Fujioka^1,2, Kohei Ueno¹, Atsushi Kobayashi¹, Jitsuo Ohta¹ (The University of Tokyo¹, JST-CREST²)

1:45 PM - 2:15 PM

[19p-E13-3] Study on a fluorescent SiC for application to nitride-based white LEDs

^○Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Inst. Nagoya Univ.²)

2:15 PM - 2:30 PM

[19p-E13-4] Characterization of InN Layers Grown by Two-Step Precursor Generation Hydride Vapor Phase Epitaxy

^○Rie Togashi¹, Hironobu Saito¹, Naoto Fujita¹, Ryota Imai¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Tokyo Univ. of Agri. & Tech.¹)

2:30 PM - 2:45 PM

[19p-E13-5] Incorporation Mechanism of c-InN in h-InN Grown by Pressurized-Reactor MOVPE

^○Y Kangawa^{1, 2}, T Hamada², T Kimura³, R Katayama³, T Matsuoka³, K Kakimoto^{1, 2} (RIAM, Kyushu Univ.¹, Kyushu Univ.², IMR, Tohoku Univ.³)

2:45 PM - 3:00 PM

△ [19p-E13-6] GaInN tunnel junctions with high InN mole fraction

^○（M1）Daichi Minamikawa¹, Yuka Kuwano¹, Shunsuke Kawai¹, Takatoshi Morita¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo University¹, Akasaki Reserch Center²)

3:00 PM - 3:15 PM

△ [19p-E13-7] Optimization of GaInN/GaN superlattice structure by in-situ XRD

^○（M1）Taiji Yamamoto¹, Daisuke Iida¹, Yasunari Kondo¹, Mihoko Sowa¹, Shinya Umeda¹, Hiroyuki Matsubara¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Res. Cen., Nagoya Univ.²)

Break 15:15〜15:30 （3:15 PM - 3:30 PM）

3:30 PM - 4:00 PM

[19p-E13-8] Assessment on recombination mechanism of nitride-based semiconductors by scanning near-field optical microscopy

^○Yoichi Kawakami¹, Mitsuru Funato¹, Akio Kaneta¹ (Kyoto Univ.¹)

4:00 PM - 4:30 PM

[19p-E13-9] Characterization and control of GaN-based heterointerfaces

Taketomo Sato¹, Masamichi Akazawa¹, ^○Tamotsu Hashizume¹ (量集センター¹)

4:30 PM - 4:45 PM

[19p-E13-10] Strain-induced optical polarization in group III nitrides grown on zinc oxide

^○Atsushi Kobayashi¹, Hiroaki Tamaki¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (IIS, The Univ. of Tokyo¹, JST-CREST²)

4:45 PM - 5:00 PM

[19p-E13-11] Local-structure dependent energy transfer in Eu-doped GaN

^○Ryuta Wakkamatsu¹, Don-gun Lee¹, Dolf Timmerman¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

5:00 PM - 5:15 PM

[19p-E13-12] Spatio-time-resolved cathodoluminescence studies of high AlN mole fraction Si-doped Al_xGa_1-xN multiple quantum wells grown on an AlN template

^○Shigefusa Chichibu¹, Youichi Ishikawa¹, Kentaro Furusawa¹, Masanori Tashiro¹, Tomomi Ohtomo¹, Hideto Miyake², Kazumasa Hiramatsu² (IMRAM, Tohoku Univ.¹, Mie Univ.²)

Break 17:15〜17:30 （5:15 PM - 5:30 PM）

5:30 PM - 5:45 PM

[19p-E13-13] Theoretical investigation of the surface orientation dependence of In-incorporation during InGaN growth

^○Yu Fujimura¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Tokyo Univ. of Agri. and Tech.¹)

5:45 PM - 6:00 PM

[19p-E13-14] Polarity Determination of MOVPE Grown GaN on c-Al₂O₃ by using Anomalous Dispersion X-ray Diffraction

^○Takashi Hanada^1,2, Katsuhiko Inaba³, Kanako Shojiki¹, Jung Hun Choi¹, Ryuji Katayama^1,2, Tomoyuki Tanikawa^1,2, Shigeyuki Kuboya¹, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST-CREST², Rigaku³)

6:00 PM - 6:15 PM

[19p-E13-15] Annealing in N2-CO of AlN buffer layers on sapphire and MOVPE growth of AlN

Gou Nishio¹, Shuhei Suzuki¹, ^○Hideto Miyake¹, Kazumasa Hiramatsu¹, Hiroyuki Fukuyama², Yuki Tokumoto³, Yoichi Yamada⁴ (Mie Univ.¹, Tohoku Univ.², Tokyo Univ.³, Yamaguchi Univ.⁴)

6:15 PM - 6:30 PM

▲ [19p-E13-16] Crystal domain microstructure analysis of a thick AlN film grown on a trench-patterned AlN/sapphire template by asymmetric X-ray microdiffraction

^○（D）Khan Dinh¹, Shotaro Takeuchi¹, Kunihiko Nakamura¹, Takuji Arauchi¹, Yoshiaki Nakamura¹, Hideto Miyake², Kazumasu Hiramatsu², Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (Osaka University¹, Mie University², SPring-8³)

6:30 PM - 7:00 PM

[19p-E13-17] Expectations for nitride-based three dimensional devices fabricated by understanding and controlling surface reaction

^○Hiroshi Amano¹ (Nagoya Univ., ARC¹)

Sessions

Symposium planned by Program Committee » Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-