Oral presentation

[19p-E18-7~19] 17.4 Device application

Wed. Mar 19, 2014 2:45 PM - 6:15 PM E18 (E307)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:45 PM - 3:00 PM

[19p-E18-7] Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and Its Application to Logic Circuit

^○（B）Yoshiki Hamana¹, Takahide Oya¹ (Yokohama National Univ.¹)

3:00 PM - 3:15 PM

[19p-E18-8] Development of carbon-nanotube-composite-thread and it’s application to “thread transistor”

^○（B）Masatoshi Yoshida¹, Takahide Oya¹ (Yokohama National Univ.¹)

3:15 PM - 3:30 PM

▲ [19p-E18-9] Advantages of Flattened Electrode in Bottom Contact Single Walled Carbon Nanotube Field Effect Transistor

^○Agung Setiadi¹, Megumi Akai¹, Akira Saito¹, Yuji Kuwahara¹ (Osaka Univ.¹)

Break 15:30〜15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [19p-E18-10] Estimation of the contact resistivity and Schottky barrier height at CNT/SiC interface by top contact electrode

^○Kazuma Suzuki¹, Masafumi Inaba¹, Megumi Shibuya¹, Chih-Yu Lee¹, Miho Myodo¹, Atsushi Hiraiwa¹, Yoshiho Masuda², Wataru Norimatsu², Michiko Kusunoki², Hiroshi Kawarada¹ (Waseda Univ.¹, Nagoya Univ.²)

4:00 PM - 4:15 PM

△ [19p-E18-11] Sub-femtogram thermogravimetric analysis using carbon nanotube resonator

^○Fumiya Deno¹, Seiya Hiroshima¹, Kuniharu Takei¹, Takayuki Arie¹, Seiji Akita¹ (Osaka Pref. Univ.¹)

4:15 PM - 4:30 PM

△ [19p-E18-12] Operation Speed Enhancement of Flexible Carbon Nanotube Integrated Circuits

^○Toshitada Sanzen¹, Antti Kaskela², Patrik Laiho², Albert Nasibulin², Shigeru Kishimoto¹, Esko Kauppinen², Yutaka Ohno¹ (Nagoya Univ.¹, Aalto Univ.²)

4:30 PM - 4:45 PM

△ [19p-E18-13] Macro-Scale Printed Strain Sensor with high sensitivity for Stress Monitoring of Infrastructures

^○Shingo Harada¹, Wataru Honda¹, Takayuki Arie¹, Seiji Akita¹, Kuniharu Takei¹ (Osaka Pref.Univ.¹)

4:45 PM - 5:00 PM

[19p-E18-14] Low-voltage carrier injection into semiconductor thin film from CNT thin film by field enhancement

^○Tatsuya Yamada¹, Shigeru Kishimoto¹, Yutaka Ohno¹ (Nagoya Univ.¹)

5:00 PM - 5:15 PM

[19p-E18-15] Characteristics of chemically-doped n-type carbon nanotube thin film transistor: Effect of atmosphere and improvement of stability

^○Tomohiro Yasunishi¹, Shigeru Kishimoto¹, Yutaka Ohno¹ (Nagoya Univ.¹)

5:15 PM - 5:30 PM

[19p-E18-16] High mobility thin film transistors using high quality semiconducting SWCNTs

^○Shunjiro Fujii^1,2, Satoshi Asano², Takeshi Tanaka^1,2, Hiromichi Kataura^1,2 (NRI, AIST¹, TASC²)

5:30 PM - 5:45 PM

[19p-E18-17] Fabrication of piezoelectric device using semiconducting single-walled carbon nanotube thin film on PVDF sheet

^○Takeshi Ikawa¹, Tomoaki Taira¹, Eika Sun¹, Hiroshi Tabata¹, Osamu Kubo¹, Mitsuhiro Katayama¹ (Grad. Sch. Eng., Osaka Univ.¹)

5:45 PM - 6:00 PM

[19p-E18-18] Development of Carbon nanotube thermal interface material

^○Akio Kawabata¹, Tomo Murakami¹, Aoi Arii¹, Mizuhisa Nihei¹, Naoki Yokoyama¹ (AIST GNC¹)

6:00 PM - 6:15 PM

[19p-E18-19] High-throughput fabrication of carbon nanotube thin-film transistors by flexographic printing : Fabrication of short channel top-gate devices

^○Michihiko Maeda¹, Kentaro Higuchi¹, Shigeru Kishimoto¹, Yuta Nakajima², Takuya Tomura², Masafumi Takesue², Katsuhiko Hata², Yutaka Ohno¹ (Nagoya Univ.¹, Bando Chemical Industries, Ltd.²)

Oral presentation

[20a-E2-1~12] 17.4 Device application

Thu. Mar 20, 2014 9:00 AM - 12:15 PM E2 (E102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-E2-1] Comparison of electrical conductivity of individual graphene flake with that of their coatings made by electrochemical method

^○Seiji Take¹, Ryoutarou Tani¹, Kazuhiro Kirihara^1,2, Masataka Hasegawa^1,3 (TASC¹, AIST NRI², AIST NTRC³)

9:15 AM - 9:30 AM

△ [20a-E2-2] Electrically driven ultra-high-speed black body emitters based on gaphene

^○Tomoya Yokoi¹, Yusuke Takayama¹, Daiju Tsuya², Hideyuki Maki¹ (Keio Univ.¹, NIMS²)

9:30 AM - 9:45 AM

[20a-E2-3] Electrical property of stacked graphene junction

^○（M2）Hiromitsu Chatani¹, Toshio Okumura¹, Teruki Isawa¹, Muneaki Iguchi¹, Takeshi Nakashima¹, Keisuke Kobayashi¹, Ryong-Sok O¹, Fumihiko Maeda², Hiroki Hibino², Masao Nagase¹, Takuya Aritsuki¹, Takuya Matsumoto¹ (Tokudai Univ.¹, NTT BRL²)

9:45 AM - 10:00 AM

△ [20a-E2-4] Large resistance modulation in metal/MoS₂/graphene vertical FET structure

^○Takehiro Yamaguchi¹, Yoshihisa Inoue¹, Satoru Masubuchi^1,2, Rai Moriya¹, Tomoki Machida^1,2 (IIS, Univ. of Tokyo¹, INQIE, Univ. of Tokyo²)

10:00 AM - 10:15 AM

△ [20a-E2-5] Experimental Study on Three-terminal Operation for Graphene ReRAM

^○Aya Shindome^1,2, Tsunaki Takahashi², Shunri Oda³, Ken Uchida^1,2 (Tokyo Inst. of Technology¹, Keio Univ.², Tokyo Inst. of Technology³)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[20a-E2-6] Fabrication and Evaluation of 20-nm-Wide Multi-Layer Graphene Interconnects

^○Haruhisa Nakano¹, Boo Zhou¹, Akiko I¹, Daiyu Kondo¹, Kenjiro Hayashi¹, Makoto Takahashi¹, Katsunori Yagi¹, Shintaro Sato¹, Naoki Yokoyama¹ (AIST¹)

10:45 AM - 11:00 AM

[20a-E2-7] Characterization of bilayer graphene single-electron transistors

^○Takuya Iwasaki¹, Muruganathan Manoharan¹, Hiroshi Mizuta^1,2 (JAIST¹, Univ. of Southampton²)

11:00 AM - 11:15 AM

[20a-E2-8] Microscopic mechanism of CO₂ molecules sensing on a graphene nanoribbon

^○Tomonori Imamura¹, Muruganathan Manoharan¹, Hiroshi Mizuta^1,2 (JAIST¹, Univ. of Southampton²)

11:15 AM - 11:30 AM

△ [20a-E2-9] Large-scale first-principles electronic transport calculations of graphene nanoribbons on SiO2/Si

^○Hideyuki Jippo¹, Taisuke Ozaki², Mari Ohfuchi¹ (Fujitsu Labs. Ltd.¹, JAIST²)

11:30 AM - 11:45 AM

△ [20a-E2-10] Fabrication of lateral fluorinated graphene/graphene interface

^○Ｗａｔａｒｕ Naruki¹, Kosuke Tahara¹, Takayuki Iwasaki¹, Satoko Furuyama¹, Akihiro Matsutani¹, Mutsuko Hatano¹ (Tokyo Institute of Technology¹)

11:45 AM - 12:00 PM

[20a-E2-11] Synthesis of Pt-Ru nanoparticles supported on carbon materials by one-step electrodeposition and characterization of electrocatalytic activity toward methanol oxidation

^○Haruhiko Yoshitake¹, Shohei Hayase², Zhipeng Wang³, Hironori Ogata^1,2 (Hosei Univ.¹, Hosei Univ.², Shinshu Univ.³)

12:00 PM - 12:15 PM

[20a-E2-12] Fabrication of Polymer Organic Light Emitting Diodes Using Graphene Films Synthesized by Microwave Plasma-CVD

^○Yuki Okigawa¹, Wataru Mizutani¹, Kenkichi Suzuki¹, Masatou Ishihara¹, Masataka Hasegawa¹ (AIST¹)

Sessions

17. Nanocarbon Technology » 17.4 Device application

[19p-E18-7~19] 17.4 Device application

[19p-E18-7] Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and Its Application to Logic Circuit

[19p-E18-8] Development of carbon-nanotube-composite-thread and it’s application to “thread transistor”

▲ [19p-E18-9] Advantages of Flattened Electrode in Bottom Contact Single Walled Carbon Nanotube Field Effect Transistor

△ [19p-E18-10] Estimation of the contact resistivity and Schottky barrier height at CNT/SiC interface by top contact electrode

△ [19p-E18-11] Sub-femtogram thermogravimetric analysis using carbon nanotube resonator

△ [19p-E18-12] Operation Speed Enhancement of Flexible Carbon Nanotube Integrated Circuits

△ [19p-E18-13] Macro-Scale Printed Strain Sensor with high sensitivity for Stress Monitoring of Infrastructures

[19p-E18-14] Low-voltage carrier injection into semiconductor thin film from CNT thin film by field enhancement

[19p-E18-15] Characteristics of chemically-doped n-type carbon nanotube thin film transistor: Effect of atmosphere and improvement of stability

[19p-E18-16] High mobility thin film transistors using high quality semiconducting SWCNTs

[19p-E18-17] Fabrication of piezoelectric device using semiconducting single-walled carbon nanotube thin film on PVDF sheet

[19p-E18-18] Development of Carbon nanotube thermal interface material

[19p-E18-19] High-throughput fabrication of carbon nanotube thin-film transistors by flexographic printing : Fabrication of short channel top-gate devices

[20a-E2-1~12] 17.4 Device application

[20a-E2-1] Comparison of electrical conductivity of individual graphene flake with that of their coatings made by electrochemical method

△ [20a-E2-2] Electrically driven ultra-high-speed black body emitters based on gaphene

[20a-E2-3] Electrical property of stacked graphene junction

△ [20a-E2-4] Large resistance modulation in metal/MoS₂/graphene vertical FET structure

△ [20a-E2-5] Experimental Study on Three-terminal Operation for Graphene ReRAM

[20a-E2-6] Fabrication and Evaluation of 20-nm-Wide Multi-Layer Graphene Interconnects

[20a-E2-7] Characterization of bilayer graphene single-electron transistors

[20a-E2-8] Microscopic mechanism of CO₂ molecules sensing on a graphene nanoribbon

△ [20a-E2-9] Large-scale first-principles electronic transport calculations of graphene nanoribbons on SiO2/Si

△ [20a-E2-10] Fabrication of lateral fluorinated graphene/graphene interface

[20a-E2-11] Synthesis of Pt-Ru nanoparticles supported on carbon materials by one-step electrodeposition and characterization of electrocatalytic activity toward methanol oxidation

[20a-E2-12] Fabrication of Polymer Organic Light Emitting Diodes Using Graphene Films Synthesized by Microwave Plasma-CVD

Sessions

17. Nanocarbon Technology » 17.4 Device application

[19p-E18-7~19] 17.4 Device application

▲ [19p-E18-9] Advantages of Flattened Electrode in Bottom Contact Single Walled Carbon Nanotube Field Effect Transistor

△ [19p-E18-10] Estimation of the contact resistivity and Schottky barrier height at CNT/SiC interface by top contact electrode

△ [19p-E18-11] Sub-femtogram thermogravimetric analysis using carbon nanotube resonator

△ [19p-E18-12] Operation Speed Enhancement of Flexible Carbon Nanotube Integrated Circuits

△ [19p-E18-13] Macro-Scale Printed Strain Sensor with high sensitivity for Stress Monitoring of Infrastructures

[20a-E2-1~12] 17.4 Device application

△ [20a-E2-2] Electrically driven ultra-high-speed black body emitters based on gaphene

△ [20a-E2-4] Large resistance modulation in metal/MoS2/graphene vertical FET structure

△ [20a-E2-5] Experimental Study on Three-terminal Operation for Graphene ReRAM

△ [20a-E2-9] Large-scale first-principles electronic transport calculations of graphene nanoribbons on SiO2/Si

△ [20a-E2-10] Fabrication of lateral fluorinated graphene/graphene interface

△ [20a-E2-4] Large resistance modulation in metal/MoS₂/graphene vertical FET structure