Oral presentation

[19a-D2-1~11] 16.2 Processing technologies and devices

Wed. Mar 19, 2014 9:30 AM - 12:30 PM D2 (D113)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 9:45 AM

[19a-D2-1] Decomposition processes of diborane on heated W wire surfaces

^○Hironobu Umemoto^1,2, Taijiro Kanemitsu^1,2, Akihito Tanaka¹ (Shizuoka Univ.¹, JST CREST²)

9:45 AM - 10:00 AM

[19a-D2-2] Reduction of Na concentration in type II Ge clathrate thin films synthesized on Ge wafers

^○Fumitaka Ohashi¹, Tomoya Sugiyama¹, Akihiro Noguchi¹, Kazuyasu Sumiya¹, Tetsuji Kume¹, Takayuki Ban¹, Shuichi Nonomura¹ (Gifu Univ.¹)

10:00 AM - 10:15 AM

[19a-D2-3] Dependence of Fundamental Property of Solution-Processed a-Si:H Films on Annealing Time

^○（M2）Yoo Sakuma¹, Keisuke Ohdaira^1,2, Takashi Masuda^1,3, Zhongrong Shen^1,2, Hideyuki Takagishi^1,2, Tatsuya Shimoda^1,2,3 (JAIST¹, JST-ALCA², JST-ERATO³)

10:15 AM - 10:30 AM

[19a-D2-4] Amorphous Silicon Carbide Films using Silicon Ink

^○Takashi Masuda^1,2, Zhongrong Shen^1,3, Hideyuki Takagishi^1,3, Keisuke Ohdaira^1,2,3, Tatsuya Shimoda^1,2,3 (JAIST¹, JAIST-GDRC², JST-ALCA³)

10:30 AM - 10:45 AM

[19a-D2-5] Textures of Si thin film from liquid source formed by green laser irradiation and their application for a solar cell

^○masahiro mizoguchi¹, takashi masuda^1,3, zhongrong shen^1,2, hideyuki takagishi^1,2, tatsuya shimoda^1,2,3 (JAIST¹, JST-ALCA², JST-ERATO³)

Break 10:45〜11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[19a-D2-6] Crystalline silicon germanium films grown on crystalline silicon substrates by solid phase crystallization

^○（M1）Yuji Kojima¹, Masao Isomura^1,2 (Tokai Univ., Graduate School of Engineering¹, Tokai Univ., Dept. Engineering²)

11:15 AM - 11:30 AM

[19a-D2-7] The formation of thin poly-Si films on textured TCO films by flash lamp annealing

^○Taiki Watanabe¹, Keisuke Ohdaira¹ (JAIST¹)

11:30 AM - 11:45 AM

[19a-D2-8] Characteristics of Si/Ge Multi-stacked Films for Infrared Image Sensor

^○Hiroki Ohta¹, Yuhei Nakamura¹, Jun Takarada¹, Akio Furukawa¹ (Tokyo Univ.of Science¹)

11:45 AM - 12:00 PM

[19a-D2-9] Calculation of Electric Characteristic in Potential Barrier Device for Infrared Sensor

^○Jun Takarada¹, Yuuhei Nakamura¹, Akio Furukawa¹ (Tokyo Univ. of Science¹)

12:00 PM - 12:15 PM

[19a-D2-10] Improvement of Adhesion of Single Crystalline Silicon Films on PET Substrate Formed by Using Meniscus Force-Mediated Large Area Layer-Transfer Technique

^○Shogo Nakamura¹, Kohei Sakaike¹, Muneki Akazawa¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

12:15 PM - 12:30 PM

△ [19a-D2-11] Fabricating single-crystalline Silicon MOSFETs on flexible substrate

^○（DC）Kohei Sakaike¹, Muneki Akazawa¹, Shogo Nakamura¹, Seiichiro Higashi¹ (Hiroshima University¹)

Sessions

16. Amorphous and Microcrystalline Materials » 16.2 Processing technologies and devices