[18a-D8-1~12] 13.2 絶縁膜技術

▲ [18a-D8-11] Effects of Annealing Ambient on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

^○（M2）Nithi Atthi，韓大熙，大見俊一郎 (Tokyo Inst. Tech.)

キーワード：Hafnium nitride,ECR plasma sputtering,high-k gate insulator