[18p-E10-1~20] Nanocarbon Technology

[18p-E10-18] Transistor characteristics of single crystalline InGaZnO film grown by sputtering

^○Yoshinori Yamada¹, Daisuke Matsubayashi¹, Shinpei Matsuda¹, Yuhei Sato¹, Masashi Oota¹, Daigo Ito¹, Masashi Tsubuku¹, Masahiro Takahashi¹, Takuya Hirohashi¹, Masayuki Sakakura¹, Syunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

Keywords:スパッタ,InGaZnO,単結晶