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13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[18p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

Tue. Mar 18, 2014 1:15 PM - 6:45 PM E14 (E302)

2:00 PM - 2:15 PM

[18p-E14-4] Mechanism of Room-Temperature Microjoining Using Ultrasonic Bonding of Compliant Bump

^○Keiichiro Iwanabe¹, Takanori Shuto¹, Tanemasa Asano¹ (Kyushu Univ¹)

Keywords:先鋭バンプ,異種材料実装