Oral presentation

[11a-D7-1~11] 15.5 Group IV crystals and alloys

Wed. Mar 11, 2015 9:00 AM - 12:00 PM D7 (16-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [11a-D7-1] A precise prediction of material properties of Si_1-xSn_x by using the GGA+U method

〇Yuki Nagae¹, Masashi Kurosawa^1,², Motohiro Kato¹, Shigehisa Shibayama^1,³, Osamu Nakatsuka¹, Shigeaki Zaima^1,⁴ (1.Nagoya Univ., 2.JSPS (PD), 3.JSPS (DC), 4.ESI, Nagoya Univ.)

11:45 AM - 12:00 PM

[11a-D7-11] Thermophysical characterizations of GeSn epilayers aiming for thermoelectric devices

〇Masashi Kurosawa^1,², Masahiro Fukuda¹, Kouta Takahashi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,³ (1.Nagoya Univ., 2.JSPS, 3.ESI, Nagoya Univ.)

9:15 AM - 9:30 AM

[11a-D7-2] First principles analysis on atomic configuration in GeSnC for solar cells

〇(M2)Ryo Matsutani¹, Koji Sueoka¹, Eiji Kamiyama^1,², Koji Izunome², Kazuhiko Kashima², Osamu Nakatsuka³ (1.Okayama Pref. Univ., 2.GlobalWafers Japan., 3.Nagoya Univ.)

9:30 AM - 9:45 AM

[11a-D7-3] First principles analysis on the bandgap in GeSiSn for solar cells

〇(M2)Ryo Suwa¹, Koji Sueoka¹, Eiji Kamiyama^1,², Koji Izunome², Kazuhiko Kashima², Osamu Nakatsuka³ (1.Okayama Pref. Univ., 2.GlobalWafers Japan., 3.Nagoya Univ.)

9:45 AM - 10:00 AM

△ [11a-D7-4] Clarification of energy band structure of Ge_1-x-ySi_xSn_y/Ge hetero structure

〇Takashi Yamaha¹, Kimihiko Kato¹, Shigehisa Shibayama^1,², Takanori Asano^1,², Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,³ (1.Nagoya Univ., 2.JSPS Research Fellow, 3.ESI, Nagoya Univ.)

10:00 AM - 10:15 AM

[11a-D7-5] Mechanism of Sn surface segregation during GeSn epitaxial growth

〇Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (1.Tokyo Univ. Agric. Technol., 2.NICT)

10:15 AM - 10:30 AM

[11a-D7-6] Formation and Characterization of Ge_1-_x-ySn_xC_y Ternary Alloy Thin Films with High Sn and C Contents by using Solid Phase Crystallization

〇Hroki Oda¹, Takashi Yamaha¹, Masashi Kurosawa^1,², Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,³ (1.Nagoya Univ., 2.JSPS Research Fellow, 3.ESI, Nagoya Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [11a-D7-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (2)

〇Kohei Suda¹, Takahiro Kijima¹, Seiya Ishihara¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Atsushi Ogura¹ (1.Meiji Univ., 2.Gas-phase Growth, 3.Toyota Technological Inst.)

11:00 AM - 11:15 AM

[11a-D7-8] Behavior of Electrically Active Defects in Ge_1-xSn_x Epitaxial Layers

〇Wakana takeuchi¹, Takanori Asano^1,², Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,³ (1.Grad. Sc. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.ESI, Nagoya Univ.)

11:15 AM - 11:30 AM

[11a-D7-9] Effect of Atomic Hydrogen Introduction on the Crystalline Property of Ge_1−xSn_x Epitaxial Layers

〇Syunsuke Fujinami¹, Takanori Asano^1,², Koya Hozaki¹, Takeshi Koyama¹, Osamu Nakatsuka¹, Hideo Kishida¹, Shigeaki Zaima^1,³ (1.Nagoya Univ., 2.JSPS (DC), 3.ESI, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [11a-D7-10] Electrical Properties of Defects in Ge_1−xSn_x Epitaxial Layers

〇Takanori Asano^1,², Shigehisa Shibayama^1,², Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,³ (1.Nagoya Univ., 2.JSPS(DC), 3.ESI)

Oral presentation

[11p-D7-1~14] 15.5 Group IV crystals and alloys

Wed. Mar 11, 2015 1:30 PM - 5:15 PM D7 (16-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[11p-D7-1] Realization of high Sn concentration GeSn on Insulator by solid-phase technique

〇Ryo Matsumura^1,², Masaya Sasaki¹, Hironori Chikita¹, Yuki Kai¹, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Dept. Electronics, Kyushu Univ., 2.JSPS Research Fellow)

1:45 PM - 2:00 PM

[11p-D7-2] Seeded Lateral Solid-Phase Crystallization of GeSn/Insulator (1)

〇Yuki Kai¹, Hironori Chikita¹, Ryo Matsumura^1,², Taizoh Sadoh¹, Masanobu Miyao¹ (1.Dept. Electronics, Kyushu Univ., 2.JSPS Research Fellow)

2:00 PM - 2:15 PM

△ [11p-D7-3] Seeded Lateral Solid-Phase Crystallization of GeSn/Insulator (2)

〇Yuki Kai¹, Hironori Chikita¹, Ryo Matsumura^1,², Taizoh Sadoh¹, Masanobu Miyao¹ (1.Dept. Electronics, Kyushu Univ., 2.JSPS Research Fellow)

2:15 PM - 2:30 PM

[11p-D7-4] Laser Annealed Seeding Solid Phase Crystallization of GeSn on Insulator (3)

〇Ryo Matsumura^1,², Hironori Chikita¹, Taizoh Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.IEEE, Kyushu Univ., 2.JSPS Research Fellow)

2:30 PM - 2:45 PM

△ [11p-D7-5] Laser Annealing Condition in Crystallization of Germanium Flim on Amorphous Substrate with (111) Orientation

〇Toru Takao¹, Masahiro Horita¹, Yoshiaki Nieda¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech.)

2:45 PM - 3:00 PM

△ [11p-D7-6] Thermal diffusion simulation of Ge films crystallization by laser annealing

〇Yoshiaki Nieda¹, Masahiro Horita¹, Toru Takao¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech.)

3:00 PM - 3:15 PM

[11p-D7-7] Difference in behavior of Si and Ge atoms for FLA crystallization

〇Naoto Matsuo¹, Shota Hirano¹, Akira Heya¹, Yoshiaki Nakamura², Takehiko Yokomori², Masaki Yoshioka² (1.Univ. of Hyogo, 2.USHIO INC.)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[11p-D7-8] Fabrication of a pseudo-single-crystalline germanium film on flexible substrates

〇hidenori higashi¹, Kenji Kasahara², Kohei Kudo³, Hayato Okamoto³, Kenta Moto³, Jong-Hyeok Park², Shinya Yamada¹, Takeshi Kanashima¹, Masanobu Miyao², Isao Tsunoda³, Kohei Hamaya¹ (1.GSES, Osaka Univ., 2.Electronics, Kyushu Univ., 3.Kumamoto Coll. Tech.)

3:45 PM - 4:00 PM

[11p-D7-9] Electrical properties of a pseudo-single-crystalline germanium grown by gold-induced layer exchange crystallization

〇Mario Nakano¹, Hidenori Higashi¹, Kenji Kasahara², Shinya Yamada¹, Takeshi Kanashima¹, Kohei Hamaya¹ (1.GSES,Osaka Univ., 2.Electronics,Kyushu Univ.)

4:00 PM - 4:15 PM

[11p-D7-10] A crystalline Ge channel TFT fabricated below 300 ^oC process

〇Kenji Kasahara¹, Yuta Nagatomi², Keisuke Yamamoto², Hidenori Higashi³, Mario Nakano³, Shinya Yamada³, Takeshi Kanashima³, Hiroshi Nakashima², Kohei Hamaya³ (1.Electronics, Kyushu Univ., 2.KASTEC, Kyushu Univ., 3.GSES, Osaka Univ.)

4:15 PM - 4:30 PM

[11p-D7-11] Sn doping effects on Al-induced crystallization of amorphous Ge thin films on glass

〇(M1)Naoki Oya¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

4:30 PM - 4:45 PM

[11p-D7-12] Aligned Ge nanowires on glass seeded by a (111)-oriented Ge thin film

〇(B)Mitsuki Nakata¹, Kaoru Toko¹, Wipakorn Jevasuwan², Naoki Fukata², Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.NIMS)

4:45 PM - 5:00 PM

[11p-D7-13] Annealing temperature dependent Au induced crystallization of a-Ge/Au/SiO₂ structure

〇kohei kudo¹, tatsushi nomitsu¹, hayato okamoto¹, kenichiro takakura¹, isao tsunoda¹ (1.KNCT)

5:00 PM - 5:15 PM

[11p-D7-14] Compressive stress stimulated crystallization for amorphous Ge on insulator

〇Kazuki Kudo¹, Takatsugu Sakai¹, Kinta Kusano¹, Shinichi Motoyama², Yutaka Kusuda², Masahiro Furuta², Nobuyuki Naka³, Tomoko Numata³, Kenichiro Takakura¹, Isao Tsunoda¹ (1.KNCT, 2.SAMCO, 3.HORIBA)

Oral presentation

[12a-D5-1~8] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2015 10:00 AM - 12:00 PM D5 (16-205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[12a-D5-1] Formation of Ge thin films on Si(100) by using thermal annealing for sub-monolayer carbon on amorphous Ge

〇takuma aoyama¹, yuhki itoh², shinji hatakeyama², tomoyuki kawashima^1,², katsuyoshi washio^1,² (1.Tohoku Univ., 2.Grad.Schl.of Eng.,Tohoku Univ)

10:15 AM - 10:30 AM

△ [12a-D5-2] Formation of Ge films in sub-monolayer carbon/Ge/Si(100) structure under the influence of growth temperature

〇(M2)Yuki Ito¹, Shinji Hatakeyama¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

10:30 AM - 10:45 AM

[12a-D5-3] Effect of Si-C reaction temperature on Ge dots using sub-monolayer carbon on Si(100)

〇Yuhki Satoh¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

10:45 AM - 11:00 AM

[12a-D5-4] Fabrication of compressively strained Si/relaxed Si_1-xC_x heterostructures utilizing Ar ion implantation technique

〇You Arisawa¹, Hoshi Yusuke¹, Fujiwara Kousuke², Yamanaka Junji², Arimoto keisuke², Nakagawa Kiyokazu², Sawano Kentarou³, Usami Noritaka¹ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.Tokyo City Univ.)

11:00 AM - 11:15 AM

△ [12a-D5-5] Suppression effect of the segregation on delta-doped P in n-Ge by the insertion of Si layer

〇Michihiro Yamada¹, Kentarou Sawano², Masashi Uematsu¹, Kohei Itoh¹ (1.Keio Univ., 2.Tokyyo City Univ.)

11:15 AM - 11:30 AM

[12a-D5-6] Flattening of two-step-growth Ge thin film on Si(100) by using MBE

〇Ryo Hayase¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

11:30 AM - 11:45 AM

[12a-D5-7] Properties of Single Crystal Ge Layers Fabricated by Two-Step Epitaxial Growth

〇Katsuya Oda¹, Tadashi Okumura¹, Jun-ichi Kasai¹, Tatemi Ido¹ (1.Hitachi Central Research Lab.)

11:45 AM - 12:00 PM

[12a-D5-8] Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al₂O₃/SiO₂BOX layers by post-annealing

〇Keisuke Yoshida¹, Yoshiaki Nakamura¹, Shotaro Takeuchi¹, Yoshihiko Moriyama^1,², Tsutomu Tezuka², Akira Sakai¹ (1.Osaka Univ., 2.GNC-AIST)

Poster presentation

[12p-P17-1~7] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2015 4:00 PM - 6:00 PM P17 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[12p-P17-1] Mushroom-Like Nano Structured Germanium

〇Masami Aono¹, Hiroshi Abe¹, Hisashi Miyazaki¹ (1.NDA)

4:00 PM - 6:00 PM

[12p-P17-2] Detection of Effect of Strain and Composition on the Valence Band of SiGe by HXPES with High Spatial Resolution and XPS

〇Shunta Yamahori¹, Tomoya Sasago¹, Eisuke Yonekura¹, Kentarou Sawano¹, Eiji Ikenaga², Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI)

4:00 PM - 6:00 PM

[12p-P17-3] Characterization of MOSFETs fabricated on strained Si/Si_1-xC_x/Si(001) structures formed by using ion-implantation technique

〇Ryo Nakagomi¹, Shoichiro Sakai¹, Kosuke Fujiwara¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

4:00 PM - 6:00 PM

[12p-P17-4] Influence of growth rate on surface morphologies of tensile-strained Si/relaxed SiGe/Si(110) heterostructures

〇naoto utsuyama¹, kei sato¹, keisuke arimoto¹, junji yamanaka¹, kiyokazu nakagawa¹, noritaka usami², kentaro sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

4:00 PM - 6:00 PM

[12p-P17-5] Relation between crystallinity and impurity activation process in strained Si/Si_1-xC_x/Si(001) heterostructures

〇Kosuke Fujiwara¹, Shoichiro Sakai¹, Shota Kobayashi¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

4:00 PM - 6:00 PM

[12p-P17-6] Optical and structural properties of Si_xC_1-x alloy thin films prepared by RF magnetron sputtering

〇(M1)Atsuki Kusunoki¹, Hiroki Hara¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

4:00 PM - 6:00 PM

[12p-P17-7] Transport properties of n-type Ge-on-Inslator (GOI) fabricated with P in-situ doping

〇Hironori Katsumata¹, Tomonori Nagashima¹, Kouhei Hamaya², Kentaro Sawano¹ (1.Tokyo City Univ., 2.Osaka Univ.)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[11a-D7-1~11] 15.5 Group IV crystals and alloys

△ [11a-D7-1] A precise prediction of material properties of Si1-xSnx by using the GGA+U method

△ [11a-D7-4] Clarification of energy band structure of Ge1-x-ySixSny/Ge hetero structure

△ [11a-D7-7] Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD (2)

△ [11a-D7-10] Electrical Properties of Defects in Ge1−xSnx Epitaxial Layers

[11p-D7-1~14] 15.5 Group IV crystals and alloys

△ [11p-D7-3] Seeded Lateral Solid-Phase Crystallization of GeSn/Insulator (2)

△ [11p-D7-5] Laser Annealing Condition in Crystallization of Germanium Flim on Amorphous Substrate with (111) Orientation

△ [11p-D7-6] Thermal diffusion simulation of Ge films crystallization by laser annealing

[12a-D5-1~8] 15.5 Group IV crystals and alloys

△ [12a-D5-2] Formation of Ge films in sub-monolayer carbon/Ge/Si(100) structure under the influence of growth temperature

△ [12a-D5-5] Suppression effect of the segregation on delta-doped P in n-Ge by the insertion of Si layer

[12p-P17-1~7] 15.5 Group IV crystals and alloys

Authentication

△ [11a-D7-1] A precise prediction of material properties of Si_1-xSn_x by using the GGA+U method

△ [11a-D7-4] Clarification of energy band structure of Ge_1-x-ySi_xSn_y/Ge hetero structure

△ [11a-D7-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (2)

△ [11a-D7-10] Electrical Properties of Defects in Ge_1−xSn_x Epitaxial Layers