Oral presentation

[12a-A23-1~12] 13.6 Semiconductor English Session

Thu. Mar 12, 2015 9:00 AM - 12:15 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [12a-A23-1] Surface potential observation of heavily-doped Si by KPFM

〇(D)Krzysztof Tyszka^1,², Daniel Moraru¹, Takeshi Mizuno¹, Ryszard Jablonski², Mihicharu Tabe¹ (1.Shizuoka Univ., 2.Warsaw Univ. of Tech.)

9:15 AM - 9:30 AM

▲ [12a-A23-2] Development of apparatus supplying hydrogen radical remotely to decompose SiCl₄ source

〇(D)Fatima DAHMANI¹, Yuji OKAMOTO^1,², Daiki TSUTSUMI^1,³, Takamasa ISHIGAKI³, Hideomi KOINUMA⁴, Sumiya MASATOMO¹ (1.NIMS inst., 2.TSUKUBA Univ., 3.Hosei Univ., 4.Tokyo Univ.)

9:30 AM - 9:45 AM

▲ [12a-A23-3] Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs

〇Daniel Moraru¹, Yuki Takasu², Arup Samanta², Takeshi Mizuno², Michiharu Tabe² (1.Fac. Eng. Shizuoka U, 2.RIE, Shizuoka U)

9:45 AM - 10:00 AM

▲ [12a-A23-4] Non-destructive Characterization of Oxide/Ge Interface by Photoluminescence Measurement

〇Shoichi Kabuyanagi^1,², Tomonori Nishimura^1,², Takeaki Yajima^1,², Akira Toriumi^1,² (1.Tokyo Univ., 2.JST-CREST)

10:00 AM - 10:15 AM

▲ [12a-A23-5] n⁺Si/pGe Heterojunctions Fabricated by Narrow Membrane Bonding

〇(P)Chi Liu^1,², Shoichi Kabuyanagi^1,², Tomonori Nishimura^1,², Akira Toriumi^1,² (1.Univ. of Tokyo, 2.JST-CREST)

10:15 AM - 10:30 AM

▲ [12a-A23-6] Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors

〇(PC)Samanta Arup¹, Daniel Moraru², Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.DEMS, Shizuoka Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▼ [12a-A23-7] Inspection of elastic stress and generated defects in thin Ge film on GeOI wafer

〇Toshimitsu Nakamura^1,², Tomonori Nishimura^1,², Takeaki Yajima^1,², Akira Toriumi^1,² (1.Univ. of Tokyo, 2.JST-CREST)

11:00 AM - 11:15 AM

▼ [12a-A23-8] Effect of Individual Dopants in Esaki Tunneling Diodes

〇(M2)Tan Hoang¹, D. Moraru^1,², R. Unno¹, A. Sapteka³, S. Purwiyanti³, L.T. Anh⁴, M. Manoharan⁴, T. Mizuno¹, H. Mizuta^4,⁵, D. Hartanto³, M. Tabe¹ (1.RIE,Shizuoka Univ., 2.Shizuoka Univ., 3.Univ. of Indonesia, 4.JAIST, 5.Univ. of Southampton)

11:15 AM - 11:30 AM

▼ [12a-A23-9] Phonon-softening in Germanium by Free Carrier Accumulation -Experimental Distinction between Impurity and Free Carrier Effect-

〇Shoichi Kabuyanagi^1,², Tomonori Nishimura^1,², Takeaki Yajima^1,², Akira Toriumi^1,² (1.Tokyo Univ., 2.JST-CREST)

11:30 AM - 11:45 AM

▼ [12a-A23-10] Catalytic Effect of Substrate-Si on SiO₂-IL Scavenging in HfO₂/SiO₂/Si Stacks

〇(DC)Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

11:45 AM - 12:00 PM

▼ [12a-A23-11] Analytical Model for SiO₂-IL Scavenging in HfO₂/SiO₂/Si Stacks

〇(DC)Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

12:00 PM - 12:15 PM

▼ [12a-A23-12] 2-nm-EOT Y-Si-O Gate Stack Formation on Si_0.5Ge₀_.5

〇CheTsung Chang¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

Sessions

13 Semiconductors » 13.6 Semiconductor English Session

[12a-A23-1~12] 13.6 Semiconductor English Session

▲ [12a-A23-1] Surface potential observation of heavily-doped Si by KPFM

▲ [12a-A23-2] Development of apparatus supplying hydrogen radical remotely to decompose SiCl₄ source

▲ [12a-A23-3] Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs

▲ [12a-A23-4] Non-destructive Characterization of Oxide/Ge Interface by Photoluminescence Measurement

▲ [12a-A23-5] n⁺Si/pGe Heterojunctions Fabricated by Narrow Membrane Bonding

▲ [12a-A23-6] Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors

▼ [12a-A23-7] Inspection of elastic stress and generated defects in thin Ge film on GeOI wafer

▼ [12a-A23-8] Effect of Individual Dopants in Esaki Tunneling Diodes

▼ [12a-A23-9] Phonon-softening in Germanium by Free Carrier Accumulation -Experimental Distinction between Impurity and Free Carrier Effect-

▼ [12a-A23-10] Catalytic Effect of Substrate-Si on SiO₂-IL Scavenging in HfO₂/SiO₂/Si Stacks

▼ [12a-A23-11] Analytical Model for SiO₂-IL Scavenging in HfO₂/SiO₂/Si Stacks

▼ [12a-A23-12] 2-nm-EOT Y-Si-O Gate Stack Formation on Si_0.5Ge₀_.5

Authentication

Sessions

13 Semiconductors » 13.6 Semiconductor English Session

[12a-A23-1~12] 13.6 Semiconductor English Session

▲ [12a-A23-1] Surface potential observation of heavily-doped Si by KPFM

▲ [12a-A23-2] Development of apparatus supplying hydrogen radical remotely to decompose SiCl4 source

▲ [12a-A23-3] Interactions of individual dopants and macroscopic quantum dots in weakly-doped nanoscale SOI-FETs

▲ [12a-A23-4] Non-destructive Characterization of Oxide/Ge Interface by Photoluminescence Measurement

▲ [12a-A23-5] n+Si/pGe Heterojunctions Fabricated by Narrow Membrane Bonding

▲ [12a-A23-6] Electric-field-assisted formation of an interfacial double-donor molecule in Si nano-transistors

▼ [12a-A23-7] Inspection of elastic stress and generated defects in thin Ge film on GeOI wafer

▼ [12a-A23-8] Effect of Individual Dopants in Esaki Tunneling Diodes

▼ [12a-A23-9] Phonon-softening in Germanium by Free Carrier Accumulation -Experimental Distinction between Impurity and Free Carrier Effect-

▼ [12a-A23-10] Catalytic Effect of Substrate-Si on SiO2-IL Scavenging in HfO2/SiO2/Si Stacks

▼ [12a-A23-11] Analytical Model for SiO2-IL Scavenging in HfO2/SiO2/Si Stacks

▼ [12a-A23-12] 2-nm-EOT Y-Si-O Gate Stack Formation on Si0.5Ge0.5

Authentication

▲ [12a-A23-2] Development of apparatus supplying hydrogen radical remotely to decompose SiCl₄ source

▲ [12a-A23-5] n⁺Si/pGe Heterojunctions Fabricated by Narrow Membrane Bonding

▼ [12a-A23-10] Catalytic Effect of Substrate-Si on SiO₂-IL Scavenging in HfO₂/SiO₂/Si Stacks

▼ [12a-A23-11] Analytical Model for SiO₂-IL Scavenging in HfO₂/SiO₂/Si Stacks

▼ [12a-A23-12] 2-nm-EOT Y-Si-O Gate Stack Formation on Si_0.5Ge₀_.5