Poster presentation

[12p-P8-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Mar 12, 2015 1:30 PM - 3:30 PM P8 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[12p-P8-1] Synthesis and Physical properties of ternary Clathrate K₈Al₇Si₃₉

Shiva Kumar Singh¹, 〇Motoharu Imai¹ (1.NIMS)

1:30 PM - 3:30 PM

[12p-P8-2] Polarized Raman spectra of β-FeSi₂(010)//Si(110) epitaxial film

〇(M1C)Haruki Yamaguchi¹, Sumito Ogata¹, Hiroaki Tsukamoto¹, Syogo Soubaru¹, Tetsu Hattori¹, Takahiko Higashi¹, Kensuke Akiyama², Yoshikazu Terai¹ (1.Kagoshima Univ., 2.Kanagawa-iri)

1:30 PM - 3:30 PM

[12p-P8-3] Investigation of strain in β-FeSi₂ epitaxial films grown on SiGe(111)

〇Hiroaki Tsukamoto¹, Syogo Soubaru¹, Haruki Yamaguchi¹, Sumito Ogata¹, Tetsu Hattori¹, Takahiko Higashi¹, Yoshikazu Terai¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[12p-P8-4] Control of conduction type in β-FeSi₂ polycrystalline thin films grown by sputtering method

〇(M1C)Tetsu Hattori¹, Yusuke Mimura¹, Takahiko Higashi¹, Shota Nakayama¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[12p-P8-5] Crystalline Quality and Thermoelectric Property of Single Phase HMS

〇Shigeyuki Jimba¹, Masaru Iioka¹, Masaru Itakura², Haruhiko Udono¹ (1.Ibaraki Univ., 2.Kyushyu Univ.)

1:30 PM - 3:30 PM

[12p-P8-6] Influence of growth rate on the crystalline quality of Mg₂Si grown by convenient melt-growth

〇Hiroshi Okazaki¹, Keita Yamaguchi¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

1:30 PM - 3:30 PM

[12p-P8-7] Fabrication of mesa-structured Mg₂Si pn-junction diode by wet etching

〇tomohiro akiyama¹, kenta daitoku¹, nobuhiko hori¹, haruhiko udono¹ (1.Ibaraki Univ.)

1:30 PM - 3:30 PM

[12p-P8-8] Electric property of single-phase MnSi_1.75-x grown from solution

Masaru Iioka¹, 〇Shunpei Hori¹, Shigeyuki Jimba¹, Yoshiaki Hara², Haruhiko Udono¹ (1.Ibaraki univ., 2.Ibaraki College of Tech.)

1:30 PM - 3:30 PM

[12p-P8-9] Effect of bombarding ion species during fabrication of Er₂O₃ film by means of ion beam sputter deposition

〇masaya fujita^1,², kenji yamaguchi², hidehito asaoka², wei mao³, takumi chikada⁴, akihiro suzuki³, takayuki terai³ (1.Ibaraki Univ., 2.Japan Atomic Energy Agency, 3.The Univ. of Tokyo, 4.Shizuoka Univ.)

1:30 PM - 3:30 PM

[12p-P8-10] Fabrication of Amorphous Carbon Nitride Thin Films

〇Kazuya Uchijima¹, Masaki Satake², Shigeyuki Nakamura³, Ken-Ichi Takarabe⁴, Kazutoshi Fukui⁵, Kunio Itoh¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ., 2.Akashi Nat. College of Tech., 3.Tsuyama Nat. College of Tech., 4.Okayama Univ. of Sci., 5.Fukui Univ.)

1:30 PM - 3:30 PM

[12p-P8-11] Study of ZnO multilayer thin films using a metal thin film for light devices

〇Ryo Nishira¹, Shin-Ichi Yamamoto¹ (1.Ryukok)

1:30 PM - 3:30 PM

[12p-P8-12] Characterization of surface on BiVO₄ thin films

〇Yuto Kubo¹, Shin-Ichi Yamamoto¹, Mikihiko Nishitani² (1.Ryukoku Univ., 2.Osaka Univ.)

1:30 PM - 3:30 PM

[12p-P8-13] Chirality Determination of Carbon Nanotube Solution Using Coherent Phonon Spectroscopy

〇(M1)Renjie Xu¹, Ikufumi Katayama¹, Yasuo Minami¹, Masahiro Kitajima^1,^2,³, Kazuhiro Yanagi⁴, Jun Takeda¹ (1.Yokokoku Univ., 2.Bouei Univ., 3.Rukusurei Co., 4.Syuto Tokyo Univ.)

1:30 PM - 3:30 PM

[12p-P8-14] Adding Estimated Diffusion Temperature to Segregation Prediction System “SurfSeg”

〇Michiko Yoshitake¹ (1.NIMS)

Oral presentation

[13a-A25-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[13a-A25-1] [Young Scientist Presentation Award Speech] Evaluation of Ag diffusion coefficient and control of diffusion depth in Mg₂Si pn-junction diode

〇Nobuhiko Hori¹, Fumitaka Esaka², Haruhiko Udono¹ (1.Ibaraki Univ., 2.JAEA)

9:15 AM - 9:30 AM

[13a-A25-2] Fabrication of mesa-structured Mg₂Si photodiode with ring-electrod

〇Kenta Daitoku¹, Nobuhiko Hori¹, Syuntaro Tanigawa², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

9:30 AM - 9:45 AM

[13a-A25-3] Characteristic evaluation of Mg₂Si film formed by annealing of Mg/Si laminate structure

〇Hiroki Hasegawa¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyam², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech FRC, 2.IGSSE)

9:45 AM - 10:00 AM

[13a-A25-4] Bulk crystal growth of Mg₂Si by liquid encapsulated VGF method

〇Reo Nakagawa¹, Hiroki Wada¹, Hiroshi Katsumata¹, Shiro Sakuragi², Satoshi Hashimoto² (1.Meiji Univ., 2.Union Materials Inc.)

10:00 AM - 10:15 AM

[13a-A25-5] Cross-sectional TEM observation of Ni-Mg₂Si interface prepared by SPS method (2)

〇Hiroharu Sugawara¹, Yuki Yamazaki¹, Shin'ichi Nakamura², Shigeyuki Nakamura³, Yoshihisa Mori⁴, Ken'ichi Takarabe⁴ (1.Tokyo Metro. U., 2.Aoyama Gakuin U., 3.Tsuyama Coll. Tech., 4.Okayama U. Sci.)

10:15 AM - 10:30 AM

[13a-A25-6] Consideration on the Synthesis Pressure Effect of Lattice Defects of Mg₂Si

〇Yoji Imai¹, Yoshihisa Mori², Shigeyuki Nakamura³, Ken-ichi Takarabe² (1.AIST, 2.Okayama Univ. Sci., 3.Tsuyama Natl. College Technol.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[13a-A25-7] Photoluminescence properties of β-FeSi₂ grown on Au-coated Si substrates

〇Kensuke Akiyama^1,², Hiroshi Funakubo² (1.Kanagawa Ind. Tech. Cen., 2.Tokyo Inst. Tech.)

11:00 AM - 11:15 AM

[13a-A25-8] Transport properties in β-FeSi₂ polycrystalline films

〇(M1C)Takahiko Higashi¹, Shota Nakayama¹, Tetsu Hattori¹, Yusuke Mimura¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (1.Kagoshima Univ.)

11:15 AM - 11:30 AM

[13a-A25-9] Formation of amorphous Si/β-FeSi₂ composite thin films by co-sputtering

〇(M1)masashi sawata¹, masahiro nakazawa¹, hiroshi katsumata¹ (1.Meiji Univ.)

11:30 AM - 11:45 AM

[13a-A25-10] High Density Formation of Fe-silicide Nanodots Induced by Remote H₂ Plasma and Characterization of Their Magnetic Properties

〇Hai Zhang¹, Katsunori Makihara¹, Akio Ohta², Yuuki Kabeya¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Nagoya Univ. VBL)

11:45 AM - 12:00 PM

[13a-A25-11] Energy bandgap of (Mn,Fe)Si_~1.7 thin films prepared by pulsed laser deposition method

〇(B)Kentaro Ishii¹, Kei Hayashi¹, Yuzuru Miyazaki¹ (1.Tohoku Univ.)

12:00 PM - 12:15 PM

▲ [13a-A25-12] Growth of CaSi₂ layers on Si substrates induced by Kirkendall void formation

Xiang Meng¹, Akiko Ueki², Haruo IMAGAWA², Hiroshi ITAHARA², 〇Hirokazu Tatsuoka³ (1.Graduate School of Science and Technology, Shizuoka Univ., 2.Toyota Central R&D Labs., Inc., 3.Graduate School of Engineering, Shizuoka Univ.)

12:15 PM - 12:30 PM

[13a-A25-13] Effect of Annealing on Structural Properties of Silicon Implanted by Xenon-ion II

〇Atsushi Kitagawa¹, Shiori Fujita¹, Hitoe Habuchi¹, Tamio Iida¹, Fumitaka Ohashi², Takayuki Ban², Tetsuji Kume², Shuichi Nonomura² (1.Gifu Natl. Coll. Technol, 2.Gifu Univ.)

Oral presentation

[13p-A25-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 13, 2015 4:15 PM - 7:15 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

△ [13p-A25-1] Preparation, crystal structure, and electrical properties of a novel compound in the Na–Al–Sn system

〇(M1)Masahiro Kanno¹, Takahiro Yamada¹, Hisanori Yamane¹ (1.IMRAM Tohoku Univ.)

4:30 PM - 4:45 PM

△ [13p-A25-2] Effect of iodine treatment on Na contents and induced crystal strains of Si clathrate thin films

〇(M1)Hirotaka Takeshita¹, Kentaro Sakai², Tomohiro Haraguti¹, Hidetoshi Suzuki¹, Fumitaka Ohashi³, Tetsuji Kume³, Atsuhiko Fukuyama¹, Shuichi Nonomura³, Tetsuo Ikari¹ (1.Univ. of Miyazaki Fac. of Eng., 2.Univ. of Miyazaki CRCC, 3.Gifu Univ. Fac. of Eng)

4:45 PM - 5:00 PM

[13p-A25-3] Optimization of Preparation Conditions for Precursor Film of Na doped Type II Si Clathrate

〇Masataka Nomura¹, Akiihiro Noguchi¹, Masafumi Sakagami¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Takayuki Ban¹, Shuichi Nonomura¹ (1.Gifu Univ.)

5:00 PM - 5:15 PM

[13p-A25-4] Evaluation and reduction of impurities in type II Si clathrate thin films

〇Koki Uehara¹, Shogo Sunaba¹, Kazutoshi Urano¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Takayuki Ban¹, Mitsuo Yamaga¹, Shuichi Nonomura¹ (1.Gifu Univ.)

5:15 PM - 5:30 PM

[13p-A25-5] Synthesis of Na doped type II Ge clathrate films on transparent substrates using Sputtered Ge films

〇Hiroyuki Manjou¹, Funato Ippei¹, Mukai Tetsuya¹, Ohashi Fumitaka¹, Ban Takayuki¹, Kume Tetsuji¹, Nonomura Shuichi¹ (1.Gifu Univ.)

5:30 PM - 5:45 PM

[13p-A25-6] Electrical properties of silicide semiconducting films composed of W-encapsulating Si clusters

〇Naoya Okada^1,², Noriyuki Uchida², Toshihiko Kanayama² (1.JST, PRESTO, 2.AIST)

5:45 PM - 6:00 PM

[13p-A25-7] Delta doping of Bi into Si crystal with using the Bi nanoline as a dopant source: Carrier transport characterization

〇Kazushi Miki^1,², Takashi Kanazawa^1,², Koichi Murata^1,², Koh'ichi Nittoh¹ (1.NIMS, 2.Univ. of Tsukuba)

6:00 PM - 6:15 PM

[13p-A25-8] Mn δ doping into IV-group semiconductors with the Mn chain as a doping source

Koichi Murata^1,², 〇Kazushi Miki^1,², Kiyofumi Nitta³, Takashi Kanazawa^1,², Satoshi Tsubomatsu^1,², Koh'ichi Nittoh¹, Osami Sakata¹, Yasuko Terada³, Tomoya Uruga³ (1.NIMS, 2.Univ. of Tsukuba, 3.JASRI)

6:15 PM - 6:30 PM

△ [13p-A25-9] Effects of Si-doped to dilute magnetic semiconductor superlattice GaGdAs / GaAs

〇Yoshiyuki Onishi¹, Takashi Yamano¹, Katsushige Yukihiro¹, Yu Harada¹, Hayato Miyagawa¹, Syun Koshiba¹, Syunsuke Nakanishi¹, Mitsuhiro Hashimoto², Toshio Takahashi² (1.Kagawa Univ., 2.ISSP)

6:30 PM - 6:45 PM

[13p-A25-10] Magnetic phase diagram and novel properties of Mn_3-xCo_xO₄

〇Shigeto Hirai¹, Ikuya Yamada², Shunsuke Yagi², Yoichi Kamihara³, Masanori Matoba³ (1.HPSTAR, 2.Osaka Pref Univ., 3.Keio Univ.)

6:45 PM - 7:00 PM

[13p-A25-11] High Temperature – High Pressure Synthesis of Rhenium Carbonitride by Using Nanoamorphous Carbon Nitride

〇Nozomu Yasui¹, Kenichi Takarabe¹, Taku Okada², Daisuke Yamazaki³, Hiroaki Ohfuji⁴, Youhei Kojima⁴ (1.Okayama Univ. Sci., 2.ISSP, Univ. Tokyo, 3.ISEI, Okayama Univ., 4.GRC, Ehime Univ.)

7:00 PM - 7:15 PM

[13p-A25-12] Raman Scattering Study in Mixed-Crystals of A- and C-rare earths

〇Yutaro Chibana¹, Akio Yamanaka¹ (1.CIST)

Oral presentation

[14a-A25-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 14, 2015 9:00 AM - 12:00 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [14a-A25-1] Formation of MoO3/n-BaSi2 heterojunctions for solar cell applications

〇Weijie Du¹, Masakazu Baba¹, Ryota Takabe¹, Hiroki Takeuchi¹, Daichi Tsukahara¹, Kaoru Toko¹, Noritaka Usami^2,³, Takashi Suemasu^1,³ (1.Univ. of Tsukuba, 2.Nagoya Univ., 3.JST-CREST)

9:15 AM - 9:30 AM

[14a-A25-2] Characterization of oxides/BaSi₂ interfaces grown on Si(111) by molecular beam epitaxy

〇Hiroki Takeuchi¹, Du Weijie¹, Takabe Ryouta¹, Toko Kaoru¹, Hara Kousuke², Usami Noritaka^3,⁴, Suemasu Takashi^1,⁴ (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

9:30 AM - 9:45 AM

△ [14a-A25-3] Characterization of BaSi₂ stable structure and properties at domain boundaries

〇Masakazu Baba¹, Masanori Kohyama², Kaoru Toko¹, Takashi Suemasu^1,³ (1.Tsukuba Univ., 2.AIST, 3.JST-CREST)

9:45 AM - 10:00 AM

[14a-A25-4] Surface potential distribution of BaSi₂ thin film on multicrystalline Si by Kelvin probe force microscopy

〇YUNPENG LI¹, Masakazu Baba¹, Ryohei Numata¹, Kaoru Toko¹, Noritaka Usami^2,⁴, Takashi Sekiguchi³, Takashi Suemasu^1,⁴ (1.Univ.Tsukuba, 2.Univ. Nagoya, 3.NIMS, 4.JST-CREST)

10:00 AM - 10:15 AM

[14a-A25-5] Observation of potential distribution around BaSi₂ pn junction on Si(111) under applied bias by Kelvin probe force microscopy

〇Daichi Tsukahara¹, Masakazu Baba¹, Kaoru Toko¹, Kentaro Watanabe^1,², Takashi Sekiguchi², Takashi Suemasu^1,³ (1.Univ. Tsukuba, 2.NIMS, 3.JST-CREST)

10:15 AM - 10:30 AM

[14a-A25-6] Investigation of surface potential distributions around grain boundaries in BaSi₂ thin-films by RF sputtering

〇(B)Seiya Yokoyama¹, Nurul A. A. Latiff¹, Masakazu Baba¹, Li Yunpeng¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu^1,³ (1.Univ. Tsukuba, 2.Tosoh Corporation, 3.JST-CREST)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[14a-A25-7] Theoretical study of diffusion and solid solubility of impurity atoms in BaSi₂

〇(M1)yuki osuga¹, takashi nakayama¹ (1.Chiba Univ.)

11:00 AM - 11:15 AM

[14a-A25-8] Proposal and Simulation of Earth-abundant SnS/BaSi₂ Solar Cells

〇Kosuke Hara^1,², Takashi Suemasu^2,³, Noritaka Usami^2,⁴ (1.Univ. of Yamanashi, 2.JST-CREST, 3.Univ. of Tsukuba, 4.Nagoya Univ.)

11:15 AM - 11:30 AM

[14a-A25-9] Fabrication of BaSi₂ Thin Films on Conductive Substrates by Vacuum Evaporation

〇(B)Takamichi Suhara¹, Kosuke Hara^2,³, Takashi Suemasu^2,⁴, Noritaka Usami^1,² (1.Nagoya Univ., 2.JST-CREST, 3.Univ. of Yamanashi, 4.Univ. of Tsukuba)

11:30 AM - 11:45 AM

[14a-A25-10] Effect of the film thickness on the BaSi₂ films fabricated by vacuum evaporation

〇Yoshihiko Nakagawa¹, Kosuke O. Hara^2,³, Takashi Suemsu^3,⁴, Noritaka Usami^1,³ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.JST-CREST, 4.Univ. of Tsukuba)

11:45 AM - 12:00 PM

[14a-A25-11] Vacuum Evaporation of SnS for SnS/BaSi₂ Heterojunction Solar Cells

〇Shintaro Suzuki¹, Takamichi Suhara¹, Kosuke Hara^2,³, Takashi Suemasu^3,⁴, Noritaka Usami^1,³ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.JST-CREST, 4.Univ. of Tsukuba)

Oral presentation

[14p-A25-1~4] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Mar 14, 2015 1:00 PM - 2:00 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[14p-A25-1] Synthesis of BaSi₂ Film using Ammonia Process

〇Takashi Sekiguchi^1,², Hisanori Yamane³, Jun Chen¹, Kentaro Watanabe^1,², Takashi Suemasu² (1.NIMS, 2.Univ. Tsukuba, 3.Tohokku Univ.)

1:15 PM - 1:30 PM

[14p-A25-2] Fabrication of BaSi₂ films on Ge(111) using solid phase epitaxy templates

〇Ryota Takabe¹, Kosuke Hara², Kaoru Toko¹, Noritaka Usami^3,⁴, Takashi Suemasu^1,⁴ (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

1:30 PM - 1:45 PM

▼ [14p-A25-3] Fabrication of Ba(Si,C)₂ films on Si(111) by plasma-assisted molecular beam epitaxy

〇(B)JAEJUN LEE¹, HIROKI TAKEUCHI², RYOTA TAKABE², KAORU TOKO^1,², TAKASHI SUEMASU^1,^2,³ (1.Coll. of engineering sciences, Univ. of Tsukuba, 2.Inst. of Applied Physics, Univ. of Tsukuba, 3.JST-CREST)

1:45 PM - 2:00 PM

[14p-A25-4] Crystal Structure of Ba_1-xSr_xSi₂

〇Motoharu Imai¹, Yoshitaka Matsushita¹ (1.NIMS)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[12p-P8-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[13a-A25-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [13a-A25-12] Growth of CaSi2 layers on Si substrates induced by Kirkendall void formation

[13p-A25-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [13p-A25-1] Preparation, crystal structure, and electrical properties of a novel compound in the Na–Al–Sn system

△ [13p-A25-2] Effect of iodine treatment on Na contents and induced crystal strains of Si clathrate thin films

△ [13p-A25-9] Effects of Si-doped to dilute magnetic semiconductor superlattice GaGdAs / GaAs

[14a-A25-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [14a-A25-1] Formation of MoO3/n-BaSi2 heterojunctions for solar cell applications

△ [14a-A25-3] Characterization of BaSi2 stable structure and properties at domain boundaries

[14p-A25-1~4] 13.2 Exploratory Materials, Physical Properties, Devices

▼ [14p-A25-3] Fabrication of Ba(Si,C)2 films on Si(111) by plasma-assisted molecular beam epitaxy

Authentication

▲ [13a-A25-12] Growth of CaSi₂ layers on Si substrates induced by Kirkendall void formation

△ [14a-A25-3] Characterization of BaSi₂ stable structure and properties at domain boundaries

▼ [14p-A25-3] Fabrication of Ba(Si,C)₂ films on Si(111) by plasma-assisted molecular beam epitaxy