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Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 15, 2016 1:30 PM - 6:00 PM A22 (Main Hall B)

Yasuaki Ishikawa(NAIST), Mamoru Furuta(Kochi Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[15p-A22-1] [Young Scientist Presentation Award Speech] Control of defects in ultra wide bandgap AOSs and applications for optoelectronic devices

〇Junghwan Kim¹, Takumi Sekiya², Keisuke Ide², Hidenori Hiramatsu^1,2, Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MCES, Tokyo Tech,, 2.MSL, Tokyo Tech)

1:45 PM - 2:00 PM

△ [15p-A22-2] Development and Electronic Structure of Amorphous Oxide Thin film Phosphors with Various Colors

〇Naoto Watanabe¹, Junghwan Kim², Keisuke Ide¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL Tokyo tech., 2.MCES Tokyo Tech.)

2:00 PM - 2:15 PM

[15p-A22-3] Dependence of photoinduced top-gate effect in a-InGaZnO TFTs on a-InGaZnO thickness

〇Kazushige Takechi¹, Hiroshi Tanabe¹ (1.NLT Technologies)

2:15 PM - 2:30 PM

▼ [15p-A22-4] Defect Analysis of Siloxane Gate Insulator and its Interface in a-IGZO Thin-Film Transistor

〇(DC)Chaiyanan Kulchaisit¹, Juan Paolo Bermundo¹, Mami N. Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

2:30 PM - 2:45 PM

△ [15p-A22-5] Characteristics for aqueous solution-processed oxide semiconductor TFT with hydrogen injection and oxidation process

〇Masashi Miyakawa¹, Mitsuru Nakata¹, Hiroshi Tsuji¹, Yoshihide Fujisaki¹, Toshihiro Yamamoto¹ (1.NHK)

2:45 PM - 3:00 PM

△ [15p-A22-6] Possible application of IGZO thin film transistor with High-k SrTa₂O₆ as GI using High Pressure Water Vapor Annealing

〇(M2)Kento Oikawa¹, Mami Fujii¹, Juan Paolo Bermundo¹, Kiyoshi Uchiyama², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.NIT, Tsuruoka College)

3:00 PM - 3:15 PM

△ [15p-A22-7] Effects of Ga Content and Sintering Temperature on Electrical Properties of Solution-processed IGZO Thin Films

〇(M1)Yusuke Ochiai¹, Takaaki Morimoto¹, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (1.SASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)

3:15 PM - 3:30 PM

[15p-A22-8] Development of High Mobility Indium Based Oxide Semiconductor Materials

〇Fumito Ootake¹, Masaki Takei¹, Motoshi Kobayashi¹, Junya Kiyota¹, Kazuya Saito¹ (1.ULVAC, Inc.)

3:45 PM - 4:00 PM

[15p-A22-9] Characterization of reliability on NBITS Instabilities of Amorphous Oxide Semiconductors using reflection CPM and their relations with TFT instabilities

〇Yuuki Ohno¹, Satoshi Tanaka¹, Kousaku Shimizu¹ (1.Nihon Univ.)

4:00 PM - 4:15 PM

[15p-A22-10] Characterization of reliability in amorphous IGZO and the IGZO thin film transistors

〇Satoru Tanaka¹, Shimizu kousaku¹ (1.Nihon University)

4:15 PM - 4:30 PM

△ [15p-A22-11] Electronic States Analysis of Weakly-Bonded Oxygen in Amorphous IGZO

〇Yosuke Kishida¹, Keisuke Ide¹, Shigenori Ueda³, Hidenori Hiramatsu^1,2, Naoki Ohashi^2,3, Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL Tokyo Tech, 2.MCES Tokyo Tech, 3.NIMS)

4:30 PM - 4:45 PM

△ [15p-A22-12] Influence of ZrO₂ insulator/In-Si-O channel interface on transistor characteristic for oxide TFT

〇(D)Kazunori Kurishima^1,2, Toshihide Nabatame², Takio Kizu², Kazuhito Tsukagoshi², Takashi Onaya^1,2, Akihiko Ohi², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA)

4:45 PM - 5:00 PM

[15p-A22-13] Crystal orientation dependence of gas sensing properties of ZnO films

〇Yutaka Adachi¹, Isao Sakaguchi¹, Taku Suzuki¹, Noriko Saito¹ (1.NIMS)

5:00 PM - 5:15 PM

[15p-A22-14] Direct Patterning of Zinc Oxide Semiconductors using Cyclo Olefin Polymer by Nanoimprint Method

〇Abdullah Alhanaki¹, Fumiya Kimura¹, Kouki Nagayama¹, Kouhei Ashida¹, Yi Sun¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech. NMRC)

5:15 PM - 5:30 PM

[15p-A22-15] Optical loss in the near-infrared spectral region of polycrystalline
Ga-doped ZnO films for use as plasmonic materials

〇Tetsuya Yamamoto¹, Junichi Nomoto¹, Hisao Makino¹ (1.Kochi Univ. Tech.)

5:30 PM - 5:45 PM

[15p-A22-16] Study of ultraviolet optical modulator using non-polar ZnO/ZnMgO multiple quantum wells

〇Shohei Iwagashita¹, Masaya Yamamono¹, Takuro Kawahara¹, Tomoki Abe¹, Hirohumi Kasada¹, Koshi Ando¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Information & Electronics Dept. Tottori Univ)

5:45 PM - 6:00 PM

[15p-A22-17] Deep-ultraviolet luminescence in rocksalt- structured Mg_1−xZn_xO thin films

〇Kentaro Kaneko¹, Keiichi Tsumura¹, Takeyoshi Onuma², Takayuki Uchida¹, Riena Jinno¹, Tomohiro Yamaguchi², Tohru Honda², Shizuo Fujita¹ (1.Kyoto Univ., 2.Kogakuin Univ.)

Session information

[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-A22-1] [Young Scientist Presentation Award Speech] Control of defects in ultra wide bandgap AOSs and applications for optoelectronic devices

△ [15p-A22-2] Development and Electronic Structure of Amorphous Oxide Thin film Phosphors with Various Colors

[15p-A22-3] Dependence of photoinduced top-gate effect in a-InGaZnO TFTs on a-InGaZnO thickness

▼ [15p-A22-4] Defect Analysis of Siloxane Gate Insulator and its Interface in a-IGZO Thin-Film Transistor

△ [15p-A22-5] Characteristics for aqueous solution-processed oxide semiconductor TFT with hydrogen injection and oxidation process

△ [15p-A22-6] Possible application of IGZO thin film transistor with High-k SrTa₂O₆ as GI using High Pressure Water Vapor Annealing

△ [15p-A22-7] Effects of Ga Content and Sintering Temperature on Electrical Properties of Solution-processed IGZO Thin Films

[15p-A22-8] Development of High Mobility Indium Based Oxide Semiconductor Materials

[15p-A22-9] Characterization of reliability on NBITS Instabilities of Amorphous Oxide Semiconductors using reflection CPM and their relations with TFT instabilities

[15p-A22-10] Characterization of reliability in amorphous IGZO and the IGZO thin film transistors

△ [15p-A22-11] Electronic States Analysis of Weakly-Bonded Oxygen in Amorphous IGZO

△ [15p-A22-12] Influence of ZrO₂ insulator/In-Si-O channel interface on transistor characteristic for oxide TFT

[15p-A22-13] Crystal orientation dependence of gas sensing properties of ZnO films

[15p-A22-14] Direct Patterning of Zinc Oxide Semiconductors using Cyclo Olefin Polymer by Nanoimprint Method

[15p-A22-15] Optical loss in the near-infrared spectral region of polycrystalline
Ga-doped ZnO films for use as plasmonic materials

[15p-A22-16] Study of ultraviolet optical modulator using non-polar ZnO/ZnMgO multiple quantum wells

[15p-A22-17] Deep-ultraviolet luminescence in rocksalt- structured Mg_1−xZn_xO thin films

Authentication

Session information

[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [15p-A22-2] Development and Electronic Structure of Amorphous Oxide Thin film Phosphors with Various Colors

▼ [15p-A22-4] Defect Analysis of Siloxane Gate Insulator and its Interface in a-IGZO Thin-Film Transistor

△ [15p-A22-5] Characteristics for aqueous solution-processed oxide semiconductor TFT with hydrogen injection and oxidation process

△ [15p-A22-6] Possible application of IGZO thin film transistor with High-k SrTa2O6 as GI using High Pressure Water Vapor Annealing

△ [15p-A22-7] Effects of Ga Content and Sintering Temperature on Electrical Properties of Solution-processed IGZO Thin Films

△ [15p-A22-11] Electronic States Analysis of Weakly-Bonded Oxygen in Amorphous IGZO

△ [15p-A22-12] Influence of ZrO2 insulator/In-Si-O channel interface on transistor characteristic for oxide TFT

Authentication

△ [15p-A22-6] Possible application of IGZO thin film transistor with High-k SrTa₂O₆ as GI using High Pressure Water Vapor Annealing

△ [15p-A22-12] Influence of ZrO₂ insulator/In-Si-O channel interface on transistor characteristic for oxide TFT