Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[16p-B1-1] Surface Stabilization of AlGaN/GaN HEMTs by Plasma Enhanced Atomic Layer Deposition

〇TAKAYUKI SUZUKI¹, TOMIAKI YAMADA¹, RYOUSUKE KAWAI¹, SHOHEI KAWAGUCHI¹, DONGYAN ZHANG¹, NAOTAKA IWATA¹ (1.Toyota Tech. Inst.)

1:45 PM - 2:00 PM

△ [16p-B1-2] Interface control process for Al₂O₃/AlGaN/GaN MOSHEMTs

〇Shota Kaneki¹, Nishiguchi Kenya¹, Hashizume Tamotsu¹ (1.RCIQE, Hokkaido Univ.)

2:00 PM - 2:15 PM

△ [16p-B1-3] Fabrication and Electric Characteristics Evaluation of GaN-MIS Capacitor with BN

〇Junya Matsushita¹, Kentarou Nagamatsu², Xu Yang¹, Atushi Tanaka², Maki Kushimto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, 3.Akasaki Research Center, 4.VBL)

2:15 PM - 2:30 PM

[16p-B1-4] Effect of Capping Layer on Thermal Oxidation of GaN Surface

〇Takahiro Yamada¹, Kenta Watanabe¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[16p-B1-5] Improved Interface Properties of SiO₂/GaN MOS Capacitor by Interfacial GaO_x Formation with Post-oxidation Treatment

〇Takahiro Yamada¹, Kenta Watanabe¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

2:45 PM - 3:00 PM

△ [16p-B1-6] Characterization of Al₂O₃/GaN structures using n-GaN layer grown on GaN substrate

〇Shota Toiya¹, Tamotsu Hasizume¹ (1.Hokkaido Univ.)

3:15 PM - 3:30 PM

△ [16p-B1-7] Effect of SiN surface passivation in AlGaN-based HFET type photosensors

〇Saki Ushida¹, Akira Yoshikawa^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac.Sci & Tec.,Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Asahi-Kasei)

3:30 PM - 3:45 PM

△ [16p-B1-8] Impact of neutral beam etching on isolation leakage current and breakdown voltage in AlGaN/GaN HEMTs

〇Fuyumi Hemmi¹, Cedric Thomas², Yi-Chun Lai³, Akio Higo³, Alex Guo⁴, Shireen Warnock⁴, Jesus A. del Alamo⁴, Seiji Samukawa^2,3, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC, Tohoku Univ., 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ., 4.MTL, MIT)

3:45 PM - 4:00 PM

△ [16p-B1-9] Study on photo-electrochemical response property of AlGaN/GaN hetero-structure and its application to low damage etching technology

〇Yusuke Kumazaki¹, Keisuke Uemura¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 4:15 PM

[16p-B1-10] Analysis of GaN HEMT Epi Surface Treated with Fluorine-Based Neutral Beam

〇Hiroyuki Ichikawa¹, Shuichi Noda², Isao Makabe¹, Kazutaka Inoue¹, Akio Higo³, Seiji Samukawa^2,3 (1.Transmission Devices Lab., Sumitomo Electric, 2.Inst. Fluid Sci., Tohoku Univ., 3.WPI-AIMR, Tohoku Univ.)

4:15 PM - 4:30 PM

[16p-B1-11] Study of contact resistance reduction on ohmic contacts with uneven AlGaN layers for AlGaN/GaN HEMT structures

〇(M1)Takumi Watanabe¹, Takuya Hoshii¹, Yusuke Takei¹, Tomohiro Shimoda¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Inst., 2.Toshiba.)

4:30 PM - 4:45 PM

△ [16p-B1-12] Effect of Metal Electrode Process on Breakdown Voltages in AlGaN/GaN HEMTs

〇Shinya Makino¹, Shintaro Ohi¹, Taisei Yamazaki¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.University of Fukui)

4:45 PM - 5:00 PM

[16p-B1-13] Local activation of Mg acceptors in GaN layers by femtosecond laser irradiation

〇(M1)Riku Nakashima¹, Takuma Mori¹, Makoto Miyoshi¹, Takashi Egawa¹, Tatsuya Tanigawa² (1.Nagoya Inst., 2.Aisin Seiki Co.)

Session information

[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

[16p-B1-1] Surface Stabilization of AlGaN/GaN HEMTs by Plasma Enhanced Atomic Layer Deposition

△ [16p-B1-2] Interface control process for Al₂O₃/AlGaN/GaN MOSHEMTs

△ [16p-B1-3] Fabrication and Electric Characteristics Evaluation of GaN-MIS Capacitor with BN

[16p-B1-4] Effect of Capping Layer on Thermal Oxidation of GaN Surface

[16p-B1-5] Improved Interface Properties of SiO₂/GaN MOS Capacitor by Interfacial GaO_x Formation with Post-oxidation Treatment

△ [16p-B1-6] Characterization of Al₂O₃/GaN structures using n-GaN layer grown on GaN substrate

△ [16p-B1-7] Effect of SiN surface passivation in AlGaN-based HFET type photosensors

△ [16p-B1-8] Impact of neutral beam etching on isolation leakage current and breakdown voltage in AlGaN/GaN HEMTs

△ [16p-B1-9] Study on photo-electrochemical response property of AlGaN/GaN hetero-structure and its application to low damage etching technology

[16p-B1-10] Analysis of GaN HEMT Epi Surface Treated with Fluorine-Based Neutral Beam

[16p-B1-11] Study of contact resistance reduction on ohmic contacts with uneven AlGaN layers for AlGaN/GaN HEMT structures

△ [16p-B1-12] Effect of Metal Electrode Process on Breakdown Voltages in AlGaN/GaN HEMTs

[16p-B1-13] Local activation of Mg acceptors in GaN layers by femtosecond laser irradiation

Authentication

Session information

[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

[16p-B1-1] Surface Stabilization of AlGaN/GaN HEMTs by Plasma Enhanced Atomic Layer Deposition

△ [16p-B1-2] Interface control process for Al2O3/AlGaN/GaN MOSHEMTs

△ [16p-B1-3] Fabrication and Electric Characteristics Evaluation of GaN-MIS Capacitor with BN

[16p-B1-4] Effect of Capping Layer on Thermal Oxidation of GaN Surface

[16p-B1-5] Improved Interface Properties of SiO2/GaN MOS Capacitor by Interfacial GaOx Formation with Post-oxidation Treatment

△ [16p-B1-6] Characterization of Al2O3/GaN structures using n-GaN layer grown on GaN substrate

△ [16p-B1-7] Effect of SiN surface passivation in AlGaN-based HFET type photosensors

△ [16p-B1-8] Impact of neutral beam etching on isolation leakage current and breakdown voltage in AlGaN/GaN HEMTs

△ [16p-B1-9] Study on photo-electrochemical response property of AlGaN/GaN hetero-structure and its application to low damage etching technology

[16p-B1-10] Analysis of GaN HEMT Epi Surface Treated with Fluorine-Based Neutral Beam

[16p-B1-11] Study of contact resistance reduction on ohmic contacts with uneven AlGaN layers for AlGaN/GaN HEMT structures

△ [16p-B1-12] Effect of Metal Electrode Process on Breakdown Voltages in AlGaN/GaN HEMTs

[16p-B1-13] Local activation of Mg acceptors in GaN layers by femtosecond laser irradiation

Authentication

△ [16p-B1-2] Interface control process for Al₂O₃/AlGaN/GaN MOSHEMTs

[16p-B1-5] Improved Interface Properties of SiO₂/GaN MOS Capacitor by Interfacial GaO_x Formation with Post-oxidation Treatment

△ [16p-B1-6] Characterization of Al₂O₃/GaN structures using n-GaN layer grown on GaN substrate