Oral presentation

[14a-B7-1~4] 13.6 Semiconductor English Session

Wed. Sep 14, 2016 10:30 AM - 11:30 AM B7 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:30 AM - 10:45 AM

▲ [14a-B7-1] [Young Scientist Presentation Award Speech] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

〇Nithi Atthi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

10:45 AM - 11:00 AM

▲ [14a-B7-2] Activation of Silicon by Ion Implantation under Heating Sample

〇Keisuke Yasuta¹, Masahiko Hasumi¹, Tomokazu Nagao², Yutaka Inouchi², Toshiyuki Sameshima¹ (1.TUAT, 2.NISSIN ION EQUIPMENT Co.)

11:00 AM - 11:15 AM

▼ [14a-B7-3] Laser induced phase conversion from TiO₂rutile to anatase.

〇(DC)Dauksta Edvins^1,2, Vigantas Mizeikis¹, Arturs Medvids², Masaru Shimomura¹, Yasuo Fukuda¹, Kenji Murakami¹ (1.Shizuoka University, 2.Riga Technical University)

11:15 AM - 11:30 AM

▲ [14a-B7-4] Cathodoluminescence Classification of Threading Dislocations in Ga- and N-face GaN

〇Xianjia Luo¹, Yuichi Oshima¹, Yujin Cho¹, Takashi Sekiguchi¹ (1.NIMS)

Poster presentation

[14p-P7-1~2] 13.6 Semiconductor English Session

Wed. Sep 14, 2016 1:30 PM - 3:30 PM P7 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

▲ [14p-P7-1] The effect of the bandpass filter on the confocal imaging using CMOS digital system for breast cancer detection

〇Hang Song¹, Afreen Azhari¹, Xia Xiao², Takamaro Kikkawa¹ (1.Hiroshima Univ., 2.Tianjin Univ.)

1:30 PM - 3:30 PM

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

〇AMINE ELMOUTAOUAKIL¹, Takuya HOSHI¹, Hiroki SUGIYAMA¹, Hideaki MATSUZAKI¹ (1.NTT Device Technology Labs.)

Sessions

13 Semiconductors » 13.6 Semiconductor English Session

[14a-B7-1~4] 13.6 Semiconductor English Session

▲ [14a-B7-1] [Young Scientist Presentation Award Speech] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

▲ [14a-B7-2] Activation of Silicon by Ion Implantation under Heating Sample

▼ [14a-B7-3] Laser induced phase conversion from TiO₂rutile to anatase.

▲ [14a-B7-4] Cathodoluminescence Classification of Threading Dislocations in Ga- and N-face GaN

[14p-P7-1~2] 13.6 Semiconductor English Session

▲ [14p-P7-1] The effect of the bandpass filter on the confocal imaging using CMOS digital system for breast cancer detection

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

Authentication

Sessions

13 Semiconductors » 13.6 Semiconductor English Session

[14a-B7-1~4] 13.6 Semiconductor English Session

▲ [14a-B7-1] [Young Scientist Presentation Award Speech] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

▲ [14a-B7-2] Activation of Silicon by Ion Implantation under Heating Sample

▼ [14a-B7-3] Laser induced phase conversion from TiO2 rutile to anatase.

▲ [14a-B7-4] Cathodoluminescence Classification of Threading Dislocations in Ga- and N-face GaN

[14p-P7-1~2] 13.6 Semiconductor English Session

▲ [14p-P7-1] The effect of the bandpass filter on the confocal imaging using CMOS digital system for breast cancer detection

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well

Authentication

▼ [14a-B7-3] Laser induced phase conversion from TiO₂rutile to anatase.

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well