一般セッション(口頭講演)

[14a-B7-1~4] 13.6 Semiconductor English Session

2016年9月14日(水) 10:30 〜 11:30 B7 (展示ホール内)

小山正人(東芝)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

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10:30 〜 10:45

▲ [14a-B7-1] [Young Scientist Presentation Award Speech] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

〇Nithi Atthi¹、 Shun-ichiro Ohmi¹ (1.Tokyo Tech)

10:45 〜 11:00

▲ [14a-B7-2] Activation of Silicon by Ion Implantation under Heating Sample

〇Keisuke Yasuta¹、 Masahiko Hasumi¹、 Tomokazu Nagao²、 Yutaka Inouchi²、 Toshiyuki Sameshima¹ (1.TUAT、2.NISSIN ION EQUIPMENT Co.)

11:00 〜 11:15

▼ [14a-B7-3] Laser induced phase conversion from TiO₂rutile to anatase.

〇(DC)Dauksta Edvins^1,2、 Vigantas Mizeikis¹、 Arturs Medvids²、 Masaru Shimomura¹、 Yasuo Fukuda¹、 Kenji Murakami¹ (1.Shizuoka University、2.Riga Technical University)

11:15 〜 11:30

▲ [14a-B7-4] Cathodoluminescence Classification of Threading Dislocations in Ga- and N-face GaN

〇Xianjia Luo¹、 Yuichi Oshima¹、 Yujin Cho¹、 Takashi Sekiguchi¹ (1.NIMS)

一般セッション(ポスター講演)

[14p-P7-1~2] 13.6 Semiconductor English Session

2016年9月14日(水) 13:30 〜 15:30 P7 (展示ホール)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

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13:30 〜 15:30

▲ [14p-P7-1] The effect of the bandpass filter on the confocal imaging using CMOS digital system for breast cancer detection

〇Hang Song¹、 Afreen Azhari¹、 Xia Xiao²、 Takamaro Kikkawa¹ (1.Hiroshima Univ.、2.Tianjin Univ.)

13:30 〜 15:30

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

〇AMINE ELMOUTAOUAKIL¹、 Takuya HOSHI¹、 Hiroki SUGIYAMA¹、 Hideaki MATSUZAKI¹ (1.NTT Device Technology Labs.)

セッション一覧

13 半導体 » 13.6 Semiconductor English Session

[14a-B7-1~4] 13.6 Semiconductor English Session

▲ [14a-B7-1] [Young Scientist Presentation Award Speech] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

▲ [14a-B7-2] Activation of Silicon by Ion Implantation under Heating Sample

▼ [14a-B7-3] Laser induced phase conversion from TiO₂rutile to anatase.

▲ [14a-B7-4] Cathodoluminescence Classification of Threading Dislocations in Ga- and N-face GaN

[14p-P7-1~2] 13.6 Semiconductor English Session

▲ [14p-P7-1] The effect of the bandpass filter on the confocal imaging using CMOS digital system for breast cancer detection

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

認証

セッション一覧

13 半導体 » 13.6 Semiconductor English Session

[14a-B7-1~4] 13.6 Semiconductor English Session

▲ [14a-B7-1] [Young Scientist Presentation Award Speech] Investigation of Bilayer HfN Gate Insulator Formed by ECR Plasma Sputtering

▲ [14a-B7-2] Activation of Silicon by Ion Implantation under Heating Sample

▼ [14a-B7-3] Laser induced phase conversion from TiO2 rutile to anatase.

▲ [14a-B7-4] Cathodoluminescence Classification of Threading Dislocations in Ga- and N-face GaN

[14p-P7-1~2] 13.6 Semiconductor English Session

▲ [14p-P7-1] The effect of the bandpass filter on the confocal imaging using CMOS digital system for breast cancer detection

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well

認証

▼ [14a-B7-3] Laser induced phase conversion from TiO₂rutile to anatase.

▲ [14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well