Demonstration of a flexible TFT with a crystalline Ge layer

hidenori higashi; Mario Nakano; Kohei Kudo; Yuichi Fujita; Shinya Yamada; Takeshi Kanashima; Isao Tsunoda; Hiroshi Nakashima; Kohei Hamaya

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[15a-B10-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Thu. Sep 15, 2016 9:00 AM - 12:15 PM B10 (Exhibition Hall)

Wenchang Yeh(Shimane Univ.), Tatsuya Okada(Univ. of the Ryukyus)

10:00 AM - 10:15 AM

△ [15a-B10-5] Demonstration of a flexible TFT with a crystalline Ge layer

〇hidenori higashi¹, Mario Nakano¹, Kohei Kudo¹, Yuichi Fujita¹, Shinya Yamada¹, Takeshi Kanashima¹, Isao Tsunoda², Hiroshi Nakashima³, Kohei Hamaya¹ (1.Osaka Univ., 2.NIT, Kumamoto College., 3.KASTEC, Kyushu Univ.)

Keywords:thin-film-transistor, germanium, flexible electronics

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