[19p-P6-1~8] 8.3 Deposition of thin film and surface treatment

Sat. Mar 19, 2016 4:00 PM - 6:00 PM P6 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[19p-P6-1] Preparation of Functional Thin Films by Backside Powder Target PLD Method

〇Hiroharu Kawasaki¹, Tamiko Ohshima¹, Yoshihito Yagyu¹, Takeshi Ihara¹, Makiko Yamauchi¹ (1.Nat'l Inst. Tech. Sasebo Col.)

4:00 PM - 6:00 PM

[19p-P6-2] Preparation of AZO films without Substrate Heating by RF Magnetized Plasma Sputtering with Cylindrical Target

〇Yasunori Ohtsu¹, Takashi Sumiyama¹, Mai Yamaguchi¹, Tatsuo Tabaru², Taisei Motomura² (1.Saga Univ., 2.AIST)

4:00 PM - 6:00 PM

[19p-P6-3] High-Speed Plasma CVD using Microwave Plasma Produced inside Slot-Antenna

〇(M1)Masaki Yamamoto¹, Suzuki Haruka¹, Toyoda Hirotaka^1,2 (1.Nagoya Univ., 2.PLANT, Nagoya Univ.)

4:00 PM - 6:00 PM

△ [19p-P6-4] Preparation of Prussian Blue-Carrying Magnetic Nanoparticles and Their Removal Property of Cesium Ion from Aqueous Solution

〇toshiya takayanagi¹, masaaki nagatsu^1,2 (1.Shizuoka Univ., 2.Science and Technology Shizuoka Univ)

4:00 PM - 6:00 PM

[19p-P6-5] Surface Treatment of Semiconductor Emitter for Thermionic Energy Converter Using Oxygen Gas Mixture Plasma

〇takatoshi watanabe¹, Atsushi Hada¹, Kengo Inoue¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

4:00 PM - 6:00 PM

[19p-P6-6] Electron Emission Characteristics of Si Emitter for Thermionic Energy Converter Treated with Atmospheric Pressure Plasma Jet

〇(M1)Kenjiro Murata¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

4:00 PM - 6:00 PM

[19p-P6-7] Fabrication of a-TiN_X thin films by atomic layer deposition at cryogenic temperature (Ⅱ)

〇ByeongHak Yoo¹, Keita Seki¹, Tetsuya Sato¹ (1.Univ. of Yamanashi)

4:00 PM - 6:00 PM

[19p-P6-8] Formation of amorphous silicon nitride by electron-beam induced reaction combined with low-temperature tunneling reactions of H atoms with solid SiF₄ films

〇Nao Sakamaki¹, Tetsuya Sato¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

Session information

[19p-P6-1~8] 8.3 Deposition of thin film and surface treatment

[19p-P6-1] Preparation of Functional Thin Films by Backside Powder Target PLD Method

[19p-P6-2] Preparation of AZO films without Substrate Heating by RF Magnetized Plasma Sputtering with Cylindrical Target

[19p-P6-3] High-Speed Plasma CVD using Microwave Plasma Produced inside Slot-Antenna

△ [19p-P6-4] Preparation of Prussian Blue-Carrying Magnetic Nanoparticles and Their Removal Property of Cesium Ion from Aqueous Solution

[19p-P6-5] Surface Treatment of Semiconductor Emitter for Thermionic Energy Converter Using Oxygen Gas Mixture Plasma

[19p-P6-6] Electron Emission Characteristics of Si Emitter for Thermionic Energy Converter Treated with Atmospheric Pressure Plasma Jet

[19p-P6-7] Fabrication of a-TiN_X thin films by atomic layer deposition at cryogenic temperature (Ⅱ)

[19p-P6-8] Formation of amorphous silicon nitride by electron-beam induced reaction combined with low-temperature tunneling reactions of H atoms with solid SiF₄ films

Authentication

Session information

[19p-P6-1~8] 8.3 Deposition of thin film and surface treatment

[19p-P6-1] Preparation of Functional Thin Films by Backside Powder Target PLD Method

[19p-P6-2] Preparation of AZO films without Substrate Heating by RF Magnetized Plasma Sputtering with Cylindrical Target

[19p-P6-3] High-Speed Plasma CVD using Microwave Plasma Produced inside Slot-Antenna

△ [19p-P6-4] Preparation of Prussian Blue-Carrying Magnetic Nanoparticles and Their Removal Property of Cesium Ion from Aqueous Solution

[19p-P6-5] Surface Treatment of Semiconductor Emitter for Thermionic Energy Converter Using Oxygen Gas Mixture Plasma

[19p-P6-6] Electron Emission Characteristics of Si Emitter for Thermionic Energy Converter Treated with Atmospheric Pressure Plasma Jet

[19p-P6-7] Fabrication of a-TiNX thin films by atomic layer deposition at cryogenic temperature (Ⅱ)

[19p-P6-8] Formation of amorphous silicon nitride by electron-beam induced reaction combined with low-temperature tunneling reactions of H atoms with solid SiF4 films

Authentication

[19p-P6-7] Fabrication of a-TiN_X thin films by atomic layer deposition at cryogenic temperature (Ⅱ)

[19p-P6-8] Formation of amorphous silicon nitride by electron-beam induced reaction combined with low-temperature tunneling reactions of H atoms with solid SiF₄ films