The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19p-S423-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sat. Mar 19, 2016 1:45 PM - 6:15 PM S423 (S4)

Tomoji Nakamura(Fujitsu Lab.), Kuniyuki Kakushima(Titech)

5:30 PM - 5:45 PM

[19p-S423-15] Germanium Fin Transistor Channel Formation using Chlorine Neutral Beam

En-Tzu Lee1, 〇Shuichi Noda1, Wataru Mizubayashi2, Kazuhiko Endo2, Seiji Samukawa1,2 (1.Tohoku Univ., 2.AIST)

Keywords:Ge Fin Transistor,Neutral Beam Etching