Etching of Ge Channel Surfaces by Oxygen Molecules

Yukinori Morita; Tatsuro Maeda; Hiroyuki Ota; Wataru Mizubayashi; Shn-ichi O'uchi; Meishoku Masahara; Takashi Matsukawa; Kazuhiko Endo

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19p-S423-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sat. Mar 19, 2016 1:45 PM - 6:15 PM S423 (S4)

Tomoji Nakamura(Fujitsu Lab.), Kuniyuki Kakushima(Titech)

5:45 PM - 6:00 PM

[19p-S423-16] Etching of Ge Channel Surfaces by Oxygen Molecules

〇Yukinori Morita¹, Tatsuro Maeda¹, Hiroyuki Ota¹, Wataru Mizubayashi¹, Shn-ichi O'uchi¹, Meishoku Masahara¹, Takashi Matsukawa¹, Kazuhiko Endo¹ (1.AIST)

Keywords:Etching,Ge,Oxygen

We have developed a novel etching technology based on the etching reaction of oxygen molecules with Ge surfaces. At low O₂ pressure, volatile monoxides (GeO) desorb and etch the surface. In this study, we measured etch rate of O₂ etching and surface morphology of O₂ etched Ge(001) surface for transistor process.