[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

△ [20p-H113-5] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (5)
- Impact of Carbon Cluster Ion Implanted Projected Range using by Microwave heat treatment -

〇TAKESHI KADONO¹, RYOSUKE OKUYAMA¹, AYUMI MASADA¹, RYOU HIROSE¹, YOSHIHIRO KOGA¹, HIDEHIKO OKUDA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

Keywords:silicon wafer,carbon cluster ion implantation,microwave heat treatment

We investigated that the diffusion behavior of carbon and hydrogen formed carbon-cluster ion implanted projection range using by microwave heat treatment.
These results indicate that microwave heat treatment is able to anneal selectivity only carbon-cluster ion implanted projection range.
Therefore, we confirmed that the carbon-cluster ion implanted production range formed the unique hydrogen depth profile using by microwave heat treatment.