Fabrication of single-crystalline LLPE-GeSn layer on quartz substrate by rapid thermal annealing and its MOSFET characteristics

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sun. Mar 20, 2016 1:45 PM - 6:45 PM S423 (S4)

Seiichiro Higashi(Hiroshima Univ.), Akito Hara(Tohoku Gakuin Univ.)

1:45 PM - 2:00 PM

〇Masahiro Koyama¹, Hiroshi Oka¹, Takashi Amamoto¹, Kohei Tominaga¹, Shogo Tanaka¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:GeSn,TFT