[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[20p-S423-11] An Application of Excimer Laser Annealing in Low-Voltage Power MOSFETs Process

〇YI CHEN¹, Tatsuya Okada¹, Takashi Noguchi¹, Fulvio MAZZAMUTO², Karim HUET² (1.Univ. of the Ryukyus, 2.SCREEN Semiconductor Solutions Co., Ltd)

Keywords:laser Annealing,shallow junction,electrical characteristics

An application of laser annealing process, which is used to form the P-type Base junction for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base junction with uniform impurity distribution is realized by adopting excimer laser annealing (ELA). High impurity activation for the shallow junction has been confirmed in melted phase. The application of the laser annealing technology in the fabrication process of practical Low-Voltage U-MOSFET is also examined.