[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[20p-S423-5] Characteristics of SPC Si-TFT fabricated by using YSZ crystallization induction layer and two-step irradiation method of pulsed laser

〇Susumu Horita¹, Lien Mai¹ (1.Jap. Adv. Inst. Sci. & Tech.)

Keywords:thin-film transistor,crystallized Si,laser annealing

Using the two-step irradiation method of YAG pulsed laser and crystallization induction (CI) layer of Yttria Stabilized Zirconia (YSZ), a deposited a-Si film is crystallized in solid phase. The Hall-effect mobility of the solid-phase-crystallized (SPC) Si film is twice as large as that without YSZ-CI layer and its activation ratio of impurity doped P is larger. This time, TFTs with the SPC-Si films were fabricated and their device properties were estimated. The field-effect mobility was about 80cm²/Vs, which was about twice as large as without YSZ-CI layer, and the standard deviation in 15 TFTs was about a half of 15 TFTs without YSZ layer.