The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sun. Mar 20, 2016 1:45 PM - 6:45 PM S423 (S4)

Seiichiro Higashi(Hiroshima Univ.), Akito Hara(Tohoku Gakuin Univ.)

2:30 PM - 2:45 PM

[20p-S423-4] High Speed Crystallization and Continuous Growth of Silicon Thin Films Induced by High Power Atmospheric Pressure Thermal-Plasma-Jet Irradiation

〇Ryosuke Nakashima1, Hiroaki Hanahusa2, Seiichiro Higashi2 (1.Hiroshima Univ., 2.Adsm)

Keywords:Atmospheric Pressure Thermal-Plasma-Jet Crystallization