[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

△ [20p-S423-3] Self-Aligned Planar Metal Double Gate Low-Temperature thin Poly-Ge TFTs on a Glass Substrate

〇Yuya Nishimura¹, Takuya Nakashima¹, Makoto Mori¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

Keywords:semiconductor,TFT,Ge

Self-aligned planar metal double-gate (DG) low-temperature (LT) poly-Ge TFTs was fabricated on glass substrate, in which channel poly-Ge thickness was 15 nm. It was observed that on/off ratio of this TFT is six times larger than that of top gate LT poly-Ge TFTs with same channel thickness. Moreover, low voltage operation of DG LT poly-Ge TFT, compared to that of TG LT poly-Ge TFT, was confirmed. It is attractive that maximum TFT fabrication process temperature in this experiment is 300C, except for crystallization process. Thus, this TFT fabrication process is applicable for not only glass substrate but also plastic substrate.