[21p-P17-1~26] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[21p-P17-2] Self-Aligned Metal Double-Gate Ni-SPC LT Poly-Si TFT with Sputtered High-k Gate Dielectric Layer on Glass Substrate

〇Shota Nibe¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

Keywords:Thin Film Transistor

To achieve the simple, low-cost, and high-performance metal double-gate (DG) low-temperature poly-Si TFT on the glass substrate, HfO₂ gate dielectric was implemented. In addition, we applied Ni-SPC technique to form poly-Si film. DG TFT using a HfO₂ demonstrated high on-current compared to those of DG TFT with SiO₂ gate dielectric and top-gate (TG) TFT with HfO₂.