Hiromasa Ohmi

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 11:45 AM A402 (402+403)

Oral presentation
| 8 Plasma Electronics
| 8.4 Plasma etching

[7a-A402-1~10] 8.4 Plasma etching

9:00 AM - 9:15 AM

[7a-A402-1] Effect of an additive gas on copper dry etching by hydrogen plasma

〇Hiromasa Ohmi¹, Jumpei Sato¹, Yusuke Kubota², Tatsuya Hirano¹, Hiroaki Kakiuxhi¹, Kiyoshi Yasutake¹ (1.Osaka Univ., 2.Tokyo Electron LTD.)

Wed. Sep 6, 2017 9:15 AM - 12:15 PM C21 (C21)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6a-C21-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

10:45 AM - 11:00 AM

[6a-C21-7] Formation of copper film by high-pressure hydrogen plasma enhanced transport

〇Hiromasa Ohmi¹, Tatuya Hirono¹, Yusuke Kubota², Yoshiki Sirasu¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka Univ., 2.Tokyo Electron LTD.)