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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6a-C21-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 6, 2017 9:15 AM - 12:15 PM C21 (C21)

Kazuyoshi Ueno(Shibaura Inst. of Tech), Masahide Goto(NHK)

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9:15 AM - 9:30 AM

△ [6a-C21-1] Hot C⁺ ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate

〇Yusuke Omata¹, Takashi Aoki¹, Tomokazu Sasaki², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Toshiba Nanoanalysis Corp.)

9:30 AM - 9:45 AM

△ [6a-C21-2] SiC Nanodots Formation by Hot C⁺ Ion Implantation into Bulk-Si Substrate

〇Shinji Nakada¹, Masaki Yamamoto¹, Sho Irie¹, Yusuke Omata¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

9:45 AM - 10:00 AM

[6a-C21-3] SiC_xN_yO_z thin films formation at RT by PECVD

〇Tamon Kunieda¹, Toru Watanabe¹, Mai Hong Minh¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

10:00 AM - 10:15 AM

[6a-C21-4] Rate theory of SiC_xN_yO_zthin film formation at room temperature by PECVD

〇Toru Watanabe¹, Mai Hong Minh¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

10:15 AM - 10:30 AM

[6a-C21-5] Fabrication of Hollow Structures Using Atomic layer Deposition

〇Tatsurou Sagawa¹, Nakamura Masayuki¹, Kobayashi Takayuki¹, Tatsuta Toshiaki¹, Motoyama Shin-ich¹ (1.Samco Inc)

10:30 AM - 10:45 AM

△ [6a-C21-6] Modeling of reductive thin-film deposition process promoted by ballistic electron incidence

〇Ryutaro Suda¹, Akira Kojima¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (1.Tokyo Univ. of Agri. & Technol.)

10:45 AM - 11:00 AM

[6a-C21-7] Formation of copper film by high-pressure hydrogen plasma enhanced transport

〇Hiromasa Ohmi¹, Tatuya Hirono¹, Yusuke Kubota², Yoshiki Sirasu¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka Univ., 2.Tokyo Electron LTD.)

11:00 AM - 11:15 AM

[6a-C21-8] In Situ Atomic Force Microscopy Observation of Electromigrated Au Nanowires during Voltage Feedback Process for Investigation of Local Temperature

〇Mamiko Yagi¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. of A. & T.)

11:15 AM - 11:30 AM

[6a-C21-9] Barrier property between Cu and SiO₂ by adding Zn for LSI wiring

〇(M2)Koichi Kido¹, Daisuke Ando¹, Yuji Suto¹, Junichi Koike¹ (1.Tohoku Univ.)

11:30 AM - 11:45 AM

[6a-C21-10] Vibration Characteristics of Electromagnetic Silicon MEMS Resonator and its Dependence on Residual Stress in Thin Film

〇Yoshiyuki Watanabe¹, Toru Yahagi¹, Yutaka Abe¹, Hiroki Murayama¹ (1.Yamagata Inst. Tech.)

11:45 AM - 12:00 PM

[6a-C21-11] Study of Connected Lower Voltage Micro EHD Pump

〇(M2)Tasuku Sato¹, Shingo Maeda¹, Yoko Yamanishi² (1.Shibaura Inst., 2.Kyushu Univ.)

12:00 PM - 12:15 PM

[6a-C21-12] Plasma Treatment Carrier Device for Bio-Samples

Katsuki Tsukasaki¹, Shinya Kumagai¹, 〇Minoru Sasaki¹ (1.Toyota Technol. Inst.)

Session information

[6a-C21-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [6a-C21-1] Hot C⁺ ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate

△ [6a-C21-2] SiC Nanodots Formation by Hot C⁺ Ion Implantation into Bulk-Si Substrate

[6a-C21-3] SiC_xN_yO_z thin films formation at RT by PECVD

[6a-C21-4] Rate theory of SiC_xN_yO_zthin film formation at room temperature by PECVD

[6a-C21-5] Fabrication of Hollow Structures Using Atomic layer Deposition

△ [6a-C21-6] Modeling of reductive thin-film deposition process promoted by ballistic electron incidence

[6a-C21-7] Formation of copper film by high-pressure hydrogen plasma enhanced transport

[6a-C21-8] In Situ Atomic Force Microscopy Observation of Electromigrated Au Nanowires during Voltage Feedback Process for Investigation of Local Temperature

[6a-C21-9] Barrier property between Cu and SiO₂ by adding Zn for LSI wiring

[6a-C21-10] Vibration Characteristics of Electromagnetic Silicon MEMS Resonator and its Dependence on Residual Stress in Thin Film

[6a-C21-11] Study of Connected Lower Voltage Micro EHD Pump

[6a-C21-12] Plasma Treatment Carrier Device for Bio-Samples

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Session information

[6a-C21-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [6a-C21-1] Hot C+ ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate

△ [6a-C21-2] SiC Nanodots Formation by Hot C+ Ion Implantation into Bulk-Si Substrate

△ [6a-C21-6] Modeling of reductive thin-film deposition process promoted by ballistic electron incidence

Authentication

△ [6a-C21-1] Hot C⁺ ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate

△ [6a-C21-2] SiC Nanodots Formation by Hot C⁺ Ion Implantation into Bulk-Si Substrate