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CS Code-sharing session » 【CS.7】6.1 & 13.3 & 13.5 Code-sharing session

[7p-A204-1~14] 【CS.7】6.1 & 13.3 & 13.5 Code-sharing session

Thu. Sep 7, 2017 1:15 PM - 5:00 PM A204 (204)

Hiroyuki Ota(AIST), Hironori Fujisawa(Univ. of Hyogo)

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1:15 PM - 1:30 PM

[7p-A204-1] Investigation of Crystal Structure and Electrical Properties of ZrO₂-based Epitaxial Thin Films

〇Sujin Choi¹, Takahisa Shiraisi¹, Takanori Kiguchi¹, Takao Shimizu², Hiroshi Funakubo², Toyohiko Konno¹ (1.Tohoku Univ., 2.Tokyo Tech.)

1:30 PM - 1:45 PM

[7p-A204-2] Phase Stability of Orthorhombic Phase in HfO₂-ZrO₂ Epitaxial Thin Films

〇Takanori Kiguchi¹, Takahisa Shiraishi¹, Sujin Choi¹, Hiroshi Funakubo², Toyyohiko J. Konno¹ (1.Tohoku Univ., 2.Tokyo Tech.)

1:45 PM - 2:00 PM

[7p-A204-3] Fabrication of ferroelectric HfO₂-based thin films by solid state epitaxy method

〇Takahisa Shiraishi¹, Sujin Choi¹, Takao Shimizu², Hiroshi Funakubo², Takanori Kiguchi¹, Toyohiko J. Konno¹ (1.Tohoku Univ., 2.Tokyo Tech.)

2:00 PM - 2:15 PM

△ [7p-A204-4] Growth of {100}-oriented epitaxial Y2O3-HfO2 thin films by sputtering method and their characterization

〇(M2)Taisei Suzuki¹, Takanori Mimura¹, Takao Shimizu², Hiroshi Uchida³, Hiroshi Funakubo^1,2 (1.Tokyo Tech. SMCT, 2.Tokyo Tech. MECS, 3.Sophia Univ. FST)

2:15 PM - 2:30 PM

△ [7p-A204-5] Temperature stability of ferroelectric Y₂O₃-HfO₂

〇(D)Takanori Mimura¹, Takao Shimizu², Takanori Kiguchi³, Akihiro Akama³, Toyohiko Konno³, Yoshio Katsuya⁴, Osami Sakata⁴, Hiroshi Funakubo^1,2 (1.Tokyo Tech. DMSE, 2.Tokyo Tech. MECS, 3.Tohoku Univ. IMR, 4.NIMS)

2:30 PM - 2:45 PM

[7p-A204-6] Evaluation of electrical properties of SrTa₂O₆high-k thin films deposited by rf magnetron sputtering and their surface roughness control

Takanori Takahashi¹, Takeshi Hoga¹, Kanji Yasui², Uraoka Yukiharu³, 〇Kiyoshi Uchiyama¹ (1.NIT, Tsuruoka, 2.Nagaoka Univ. Tech., 3.NAIST)

3:00 PM - 3:15 PM

[7p-A204-7] Nanoscale Domain Dot Writing on HfO₂-Based Ferroelectric Thin Films

〇Yoshiomi Hiranaga¹, Takanori Mimura², Takao Shimizu², Hiroshi Funakubo², Yasuo Cho¹ (1.Tohoku Univ., 2.Tokyo Tech.)

3:15 PM - 3:30 PM

[7p-A204-8] Fabrication of ferroelectric Hf_xZr_1-xO₂/Si hetero structure by using dual-target magnetron sputtering system

〇Kenshi Takada¹, Daiki Kamada¹, Ryosuke Kanaya¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

3:30 PM - 3:45 PM

[7p-A204-9] Effect of atmospheric pressure plasma irradiation to HfO₂ epitaxial thin films on (001)Si

〇Daiki Kamada¹, Kenshi Takada¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Nrifumi Fujimura¹ (1.Osaka Pref. Univ.)

3:45 PM - 4:00 PM

△ [7p-A204-10] Ferroelectricity of thick Hf_xZr_1-xO₂ film using nano-crystal ZrO₂ seed layer

〇(M2)Takashi Onaya^1,2, Toshihide Nabatame^2,3, Naomi Sawamoto¹, Kazunori Kurishima^1,2, Akihiko Ohi², Naoki Ikeda², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA, 3.CREST, JST)

4:00 PM - 4:15 PM

[7p-A204-11] Correlation between Ferroelectricity and Leakage Current in Hf-ZrO films

〇Shinji Migita¹, Hiroyuki Ota¹, Hiroyuki Yamada¹, Keisuke Shibuya¹, Akihito Sawa¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

4:15 PM - 4:30 PM

[7p-A204-12] On the Validity of 1D Approximations in Device Simulation of Negative Capacitance Transistors

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Hiroyuki Ota¹, Shinji Migita¹, Hidehiro Asai¹ (1.AIST)

4:30 PM - 4:45 PM

△ [7p-A204-13] Investigations on Dynamic Characteristics of Ferroelectric HfO₂ Based on Ferroelectric Multi-Domain Interaction Model

〇(D)Kyungmin Jang¹, Nozomu Ueyama¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Univ. of Tokyo)

4:45 PM - 5:00 PM

[7p-A204-14] Demonstration of a Nonvolatile SRAM Integrated with Ferroelectric HfO₂ Capacitor
for Ultralow Power Application

〇Masaharu Kobayashi¹, Nozomu Ueyama¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

Session information

[7p-A204-1~14] 【CS.7】6.1 & 13.3 & 13.5 Code-sharing session

[7p-A204-1] Investigation of Crystal Structure and Electrical Properties of ZrO₂-based Epitaxial Thin Films

[7p-A204-2] Phase Stability of Orthorhombic Phase in HfO₂-ZrO₂ Epitaxial Thin Films

[7p-A204-3] Fabrication of ferroelectric HfO₂-based thin films by solid state epitaxy method

△ [7p-A204-4] Growth of {100}-oriented epitaxial Y2O3-HfO2 thin films by sputtering method and their characterization

△ [7p-A204-5] Temperature stability of ferroelectric Y₂O₃-HfO₂

[7p-A204-6] Evaluation of electrical properties of SrTa₂O₆high-k thin films deposited by rf magnetron sputtering and their surface roughness control

[7p-A204-7] Nanoscale Domain Dot Writing on HfO₂-Based Ferroelectric Thin Films

[7p-A204-8] Fabrication of ferroelectric Hf_xZr_1-xO₂/Si hetero structure by using dual-target magnetron sputtering system

[7p-A204-9] Effect of atmospheric pressure plasma irradiation to HfO₂ epitaxial thin films on (001)Si

△ [7p-A204-10] Ferroelectricity of thick Hf_xZr_1-xO₂ film using nano-crystal ZrO₂ seed layer

[7p-A204-11] Correlation between Ferroelectricity and Leakage Current in Hf-ZrO films

[7p-A204-12] On the Validity of 1D Approximations in Device Simulation of Negative Capacitance Transistors

△ [7p-A204-13] Investigations on Dynamic Characteristics of Ferroelectric HfO₂ Based on Ferroelectric Multi-Domain Interaction Model

[7p-A204-14] Demonstration of a Nonvolatile SRAM Integrated with Ferroelectric HfO₂ Capacitor
for Ultralow Power Application

Authentication

Session information

[7p-A204-1~14] 【CS.7】6.1 & 13.3 & 13.5 Code-sharing session

△ [7p-A204-4] Growth of {100}-oriented epitaxial Y2O3-HfO2 thin films by sputtering method and their characterization

△ [7p-A204-5] Temperature stability of ferroelectric Y2O3-HfO2

△ [7p-A204-10] Ferroelectricity of thick HfxZr1-xO2 film using nano-crystal ZrO2 seed layer

△ [7p-A204-13] Investigations on Dynamic Characteristics of Ferroelectric HfO2 Based on Ferroelectric Multi-Domain Interaction Model

Authentication

△ [7p-A204-5] Temperature stability of ferroelectric Y₂O₃-HfO₂

△ [7p-A204-10] Ferroelectricity of thick Hf_xZr_1-xO₂ film using nano-crystal ZrO₂ seed layer

△ [7p-A204-13] Investigations on Dynamic Characteristics of Ferroelectric HfO₂ Based on Ferroelectric Multi-Domain Interaction Model