[6p-C21-1~20] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6p-C21-7] Silicon Nitride Film Formations Using the Magnetic-Mirror-Confined Plasma Source for Minimal Fab System

〇Tetsuya Goto¹, Kei-ichiro Sato², Yuki Yabuta³, Shigetoshi Sugawa¹, Shiro Hara^4,5 (1.Tohoku Univ., 2.Kotec Co., LTD., 3.Seinan Industries Co., LTD., 4.AIST, 5.MINIMAL)

Keywords:minimal fab system, Low damage plasma processes, Silicon nitride film

We developed a new compact magnetic mirror confined ECR plasma source for the plasma CVD used in the minimal fab system which has been developed by AIST as the new semiconductor manufacturing system. The developed plasma source could be successfully installed into the minimal body, and the silicon nitride film could be formed with the practical deposition rate even when the plasma excitation microwave power was very low at 2 W.