[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [8a-A411-6] Measurement of surface potential as afunction SiO₂ film thickness for investigation of self-compensation mechanism of X-ray induced charge-up on SiO₂ surface

〇Takahiro Harie^1,2, Kobayashi Daisuke², Yamamoto Tomoyuki¹, Hirose Kazuyuki^1,2 (1.Waseda Univ., 2.ISAS/JAXA)

Keywords:charge-up, XPS, surface potential