Schottky diode characteristics at metal/surface-damaged Ge

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Fri. Mar 17, 2017 9:00 AM - 12:45 PM E206 (E206)

Kuniyuki Kakushima(Titech), Tatsuya Okada(Univ. of the Ryukyus)

9:45 AM - 10:00 AM

〇(M1)Xuan Luo¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

Keywords:Germanium, Schottky barrier