Oral presentation
[18p-431B-1~12] 【CS.7】 Code-sharing Session of 6.5 & 7.6
Tue. Sep 18, 2018 1:45 PM - 5:15 PM 431B (431-2)
Shuichi Ogawa(Tohoku Univ.), Mitsunori Kurahashi(NIMS)
△:Presentation by Applicant for JSAP Young Scientists Presentation Award
▲:English Presentation
▼:Both of Above
No Mark:None of Above
1:45 PM - 2:15 PM
〇Hiroki Yamaguchi1, Yu Matsuda2, Tomohide Niimi1 (1.Nagoya Univ., 2.Waseda Univ.)
2:15 PM - 2:30 PM
〇Tsukasa Terada1, Takafumi Ishibe1, Kentaro Watanabe2, Yoshiaki Nakamura1,3 (1.Osaka Univ., 2.Tohoku Univ., 3.CREST-JST)
2:30 PM - 2:45 PM
〇Mitsunori Kurahashi1 (1.NIMS)
2:45 PM - 3:00 PM
〇(D)Yasutaka Tsuda1, Jessiel Gueriba2, Takamasa Makino1, Siti Zulaehah2, Akitaka Yoshigoe3, Wilson Dino2, Michio Okada1 (1.Osaka Univ. Grad. Sch. Sci., 2.Osaka Univ. Grad. Sch. Eng., 3.JAEA)
3:00 PM - 3:15 PM
〇(M1)Kou Fukuisi1,2,3,4 (1.Osaka Univ., 2.Laser Inst., 3.Shiraga labo., 4.PLP group)
3:30 PM - 3:45 PM
〇Michiko Yoshitake1, Shinjiro Yagyu1, Toyohiro Chikyow1 (1.NIMS)
3:45 PM - 4:00 PM
〇Kei Mitsuhara1, Daichi Yuyama1, Takeru Yagi1, Toshitaka Aoki1, Masaru Takizawa1 (1.Ritsumeikan Univ.)
4:00 PM - 4:15 PM
〇Azusa Hattori1,2, Shohei Takemoto3, Ken Hattori3, Hiroshi Daimon3, Hidekazu Tanaka1 (1.ISIR, Osaka Univ., 2.JST-PRESTO, 3.NAIST)
4:15 PM - 4:30 PM
〇(P)Daisuke Ohori1, Seiji Samukawa1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ.)
4:30 PM - 4:45 PM
〇Osamu Kubo1, Satoshi Endo1, Hitoshi Sato2, Koji Miyamoto2, Seijiro Kinoshita1, Ryuji Sugahara1, Hiroshi Tabata1, Taichi Okuda2, Mitsuhiro Katayama1 (1.Osaka Univ., 2.Hiroshima Univ.)
4:45 PM - 5:00 PM
[18p-431B-11] The annealing effect for the air-exposed surface on the GaN semiconductor photocathode
〇(D)Daiki Sato1, Tomohiro Nishitani2, Yoshio Honda2, Hiroshi Amano2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
5:00 PM - 5:15 PM
〇Toshio Miyamachi1, Shuhei Nakashima1, Yasumasa Takagi2, Toshihiko Yokoyama2, Fumio Komori1 (1.ISSP, 2.IMS)