[19p-234A-1~10] 7.3 Micro/Nano patterning and fabrication

[19p-234A-4] Radiation-Induced Primary Process of Model Molecules of Fluorinated EUV Resist

〇Kazumasa Okamoto¹, Hiroki Yamamoto², Kazuo Kobayashi¹, Takahiro Kozawa¹ (1.Osaka Univ., 2.QST)

Keywords:EUV resist, fluorinated resist, reaction mechanism

Fluorination of resist materials is an effective method used to enhance the energy deposition of EUV light. The reaction mechanism of radical ions produced by ionizing radiation is important to understand when considering the radiation-chemistry of the resist materials using EUV lithography. Here, the dynamics of the radical anions and cations of benzenes with one or two 2-hydroxyhexafluoroisopropyl groups were studied using radiolysis techniques.