Change of Raman Scattering as a Function of Laser Power in Si-Films Crystallized by CLC

Muhammad Arif Razali; Nobuo Sasaki; Yasuaki Ishikawa; Yukiharu Uraoka

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20a-233-1~9] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Thu. Sep 20, 2018 9:30 AM - 11:45 AM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.)

10:00 AM - 10:15 AM

▼ [20a-233-3] Change of Raman Scattering as a Function of Laser Power in Si-Films Crystallized by CLC

〇(M2)Muhammad Arif Razali, Nobuo Sasaki^2,1, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Sasaki Consulting)

Keywords:laser annealing, CLC, polycrystalline silicon

Crystallized poly-Si by continuous wave laser were done and the grain orientation were observed by EBSD for different laser power. Raman spectroscopy then carried out at different grain texture to study the stress in different grain texture and orientation.